onsemi FET, MOSFET Arrays FDS4559

Mosfet Array N and P-Channel 60V 4.5A, 3.5A 1W Surface Mount 8-SOIC

Mosfet Array N and P-Channel 60V 4.5A, 3.5A 1W Surface Mount 8-SOIC

Mosfet Array N and P-Channel 60V 4.5A, 3.5A 1W Surface Mount 8-SOIC

MOSFET N&P-Ch 60V 4.5A/3.5A SOIC8

MOSFET N&P-Ch 60V 4.5A/3.5A SOIC8

MOSFET N&P-Ch 60V 4.5A/3.5A SOIC8

MOSFET N/P-CH 60V 4.5/3.5A 8SOIC

POWER FIELD-EFFECT TRANSISTOR, 4.5A I D, 60V, 0.055OHM, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SO-8, 8 PIN. FREE 2 YEAR RADWELL WARRANTY

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016142-FDS4559
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: FDS4559
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4.5A, 3.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 650pF @ 25V
Maximum Rds On at Id,Vgs: 55 mOhm @ 4.5A, 10V
Alternative Parts (Cross-Reference): UZXMC4559DN8TA ; UZXMC4559DN8TC ; ZXMC4559DN8TC; ZXMC4559DN8TA;
Introduction Date: October 18, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Quantity per package: 2,500