POWER FIELD-EFFECT TRANSISTOR, 4.5A I D, 60V, 0.055OHM, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SO-8, 8 PIN. FREE 2 YEAR RADWELL WARRANTY
MOSFET N&P-Ch 60V 4.5A/3.5A SOIC8
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016142-FDS4559
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: FDS4559
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4.5A, 3.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 650pF @ 25V
Maximum Rds On at Id,Vgs: 55 mOhm @ 4.5A, 10V
Alternative Parts (Cross-Reference): UZXMC4559DN8TA ; UZXMC4559DN8TC ; ZXMC4559DN8TC; ZXMC4559DN8TA;
Introduction Date: October 18, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Quantity per package: 2,500
MOSFET N/P-CH 60V 4.5/3.5A 8SOIC
Mosfet Array N and P-Channel 60V 4.5A, 3.5A 1W Surface Mount 8-SOIC
Mosfet Array N and P-Channel 60V 4.5A, 3.5A 1W Surface Mount 8-SOIC
Mosfet Array N and P-Channel 60V 4.5A, 3.5A 1W Surface Mount 8-SOIC
DUAL N/P CHANNEL MOSFET, 60V, SOIC; Transistor Polarity:Complementa
MOSFET, FULL REEL; Transistor Polarity:Complementa
MOSFET N/P-CH 60V 8SOIC
| Radwell International | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 16130392 | 9175471 | 9175471P | 016142-FDS4559 | FDS4559 | FDS4559DKR-ND | 34C0166 | 67R2069 | FDS4559 | FDS4559 |
| Product Name | Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4559 | FET, MOSFET Arrays | FET, MOSFET Arrays | Dual N/p Channel Mosfet, 60V, Soic; Transistor Polarity Onsemi | Mosfet, Full Reel; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||||||||
| Package Type | Soic | SOIC | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 | TO-3 | |||
| Number of units in IC | 2 | |||||||||
| Polarity | P-Channel | P-Channel; N and P-Channel | P-Channel | |||||||
| V(BR)DSS | 60 volts | 60 volts |
