onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4501H FDS4501H

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 104106-FDS4501H Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 30V, 20V Continuous Drain Current at 25°C: 9.3A, 5.6A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 27nC @ 4.5V Max Input Capacitance: 1958pF @ 10V Maximum Rds On at Id,Vgs: 18 mOhm @ 9.3A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 104106-FDS4501H Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 30V, 20V Continuous Drain Current at 25°C: 9.3A, 5.6A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 27nC @ 4.5V Max Input Capacitance: 1958pF @ 10V Maximum Rds On at Id,Vgs: 18 mOhm @ 9.3A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4501H - 104106-FDS4501H - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4501H
104106-FDS4501H
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4501H 104106-FDS4501H
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 104106-FDS4501H Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 30V, 20V Continuous Drain Current at 25°C: 9.3A, 5.6A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 27nC @ 4.5V Max Input Capacitance: 1958pF @ 10V Maximum Rds On at Id,Vgs: 18 mOhm @ 9.3A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 104106-FDS4501H
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 30V, 20V
Continuous Drain Current at 25°C: 9.3A, 5.6A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 27nC @ 4.5V
Max Input Capacitance: 1958pF @ 10V
Maximum Rds On at Id,Vgs: 18 mOhm @ 9.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
FET, MOSFET Arrays - FDS4501HFSCT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS4501HFSCT-ND
FET, MOSFET Arrays FDS4501HFSCT-ND
Mosfet Array N and P-Channel 30V, 20V 9.3A, 5.6A 1W Surface Mount 8-SOIC

Mosfet Array N and P-Channel 30V, 20V 9.3A, 5.6A 1W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - FDS4501HFSTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS4501HFSTR-ND
FET, MOSFET Arrays FDS4501HFSTR-ND
Mosfet Array N and P-Channel 30V, 20V 9.3A, 5.6A 1W Surface Mount 8-SOIC

Mosfet Array N and P-Channel 30V, 20V 9.3A, 5.6A 1W Surface Mount 8-SOIC

Buy Now Datasheet
Singapore
P-Channel 30V 9.3A SOIC MOSFET Transistor
289-FDS4501H
P-Channel 30V 9.3A SOIC MOSFET Transistor 289-FDS4501H
N/P-Channel MOSFET, 30V, 9.3A, 18mR, SOIC, Tape & Reel Product overview: FDS4501H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 9.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.3A, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS4501H can be used for catalog matching and distributor lookup.

N/P-Channel MOSFET, 30V, 9.3A, 18mR, SOIC, Tape & Reel Product overview: FDS4501H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 9.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.3A, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS4501H can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, 30V, Soic; Transistor Polarity Onsemi - 78K5932 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, 30V, Soic; Transistor Polarity Onsemi
78K5932
Mosfet, 30V, Soic; Transistor Polarity Onsemi 78K5932
MOSFET, 30V, SOIC; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.3A; On Resistance Rds(on):0.014ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

MOSFET, 30V, SOIC; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.3A; On Resistance Rds(on):0.014ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS4501H - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS4501H
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS4501H
MOSFET N/P-CH 30V 9.3A 8SOIC

MOSFET N/P-CH 30V 9.3A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDS4501H
MOSFET FDS4501H
MOSFET SO-8 COMP N-P-CH

MOSFET SO-8 COMP N-P-CH

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Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 104106-FDS4501H FDS4501HFSCT-ND 289-FDS4501H 78K5932 FDS4501H FDS4501H
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4501H FET, MOSFET Arrays P-Channel 30V 9.3A SOIC MOSFET Transistor Mosfet, 30V, Soic; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel
V(BR)DSS 30 to 20 volts
PD 1000 milliwatts 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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