onsemi P-Channel 30V 9.3A SOIC MOSFET Transistor FDS4501H

N/P-Channel MOSFET, 30V, 9.3A, 18mR, SOIC, Tape & Reel Product overview: FDS4501H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 9.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.3A, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS4501H can be used for catalog matching and distributor lookup.

Mosfet Array N and P-Channel 30V, 20V 9.3A, 5.6A 1W Surface Mount 8-SOIC

Mosfet Array N and P-Channel 30V, 20V 9.3A, 5.6A 1W Surface Mount 8-SOIC

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 104106-FDS4501H
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 30V, 20V
Continuous Drain Current at 25°C: 9.3A, 5.6A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 27nC @ 4.5V
Max Input Capacitance: 1958pF @ 10V
Maximum Rds On at Id,Vgs: 18 mOhm @ 9.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500