onsemi FET, MOSFET Arrays FDS4501H

Description
Mosfet Array N and P-Channel 30V, 20V 9.3A, 5.6A 1W Surface Mount 8-SOIC
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Description
Mosfet Array N and P-Channel 30V, 20V 9.3A, 5.6A 1W Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDS4501HFSCT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS4501HFSCT-ND
FET, MOSFET Arrays FDS4501HFSCT-ND
Mosfet Array N and P-Channel 30V, 20V 9.3A, 5.6A 1W Surface Mount 8-SOIC

Mosfet Array N and P-Channel 30V, 20V 9.3A, 5.6A 1W Surface Mount 8-SOIC

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FET, MOSFET Arrays - FDS4501HFSTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS4501HFSTR-ND
FET, MOSFET Arrays FDS4501HFSTR-ND
Mosfet Array N and P-Channel 30V, 20V 9.3A, 5.6A 1W Surface Mount 8-SOIC

Mosfet Array N and P-Channel 30V, 20V 9.3A, 5.6A 1W Surface Mount 8-SOIC

Buy Now Datasheet
Singapore
P-Channel 30V 9.3A SOIC MOSFET Transistor
289-FDS4501H
P-Channel 30V 9.3A SOIC MOSFET Transistor 289-FDS4501H
N/P-Channel MOSFET, 30V, 9.3A, 18mR, SOIC, Tape & Reel Product overview: FDS4501H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 9.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.3A, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS4501H can be used for catalog matching and distributor lookup.

N/P-Channel MOSFET, 30V, 9.3A, 18mR, SOIC, Tape & Reel Product overview: FDS4501H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 9.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.3A, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS4501H can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4501H - 104106-FDS4501H - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4501H
104106-FDS4501H
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4501H 104106-FDS4501H
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 104106-FDS4501H Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 30V, 20V Continuous Drain Current at 25°C: 9.3A, 5.6A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 27nC @ 4.5V Max Input Capacitance: 1958pF @ 10V Maximum Rds On at Id,Vgs: 18 mOhm @ 9.3A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 104106-FDS4501H
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 30V, 20V
Continuous Drain Current at 25°C: 9.3A, 5.6A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 27nC @ 4.5V
Max Input Capacitance: 1958pF @ 10V
Maximum Rds On at Id,Vgs: 18 mOhm @ 9.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FDS4501H
MOSFET FDS4501H
MOSFET SO-8 COMP N-P-CH

MOSFET SO-8 COMP N-P-CH

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Mosfet, 30V, Soic; Transistor Polarity Onsemi - 78K5932 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, 30V, Soic; Transistor Polarity Onsemi
78K5932
Mosfet, 30V, Soic; Transistor Polarity Onsemi 78K5932
MOSFET, 30V, SOIC; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.3A; On Resistance Rds(on):0.014ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

MOSFET, 30V, SOIC; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.3A; On Resistance Rds(on):0.014ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS4501H - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS4501H
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS4501H
MOSFET N/P-CH 30V 9.3A 8SOIC

MOSFET N/P-CH 30V 9.3A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDS4501HFSCT-ND 289-FDS4501H 104106-FDS4501H FDS4501H 78K5932 FDS4501H
Product Name FET, MOSFET Arrays P-Channel 30V 9.3A SOIC MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4501H MOSFET Mosfet, 30V, Soic; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO TO-3
Polarity P-Channel P-Channel
PD 1000 milliwatts 1000 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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