onsemi Single FETs, MOSFETs FDS4488

Description
MOSFET N-CH 30V 7.9A 8SOIC
Request a Quote Datasheet
Description
MOSFET N-CH 30V 7.9A 8SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
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Single FETs, MOSFETs - FDS4488CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS4488CT-ND
Single FETs, MOSFETs FDS4488CT-ND
MOSFET N-CH 30V 7.9A 8SOIC

MOSFET N-CH 30V 7.9A 8SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4488 - 016141-FDS4488 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4488
016141-FDS4488
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4488 016141-FDS4488
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016141-FDS4488 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.9A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 13nC @ 5V Max Input Capacitance: 927pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 22 mOhm @ 7.9A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016141-FDS4488
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.9A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 13nC @ 5V
Max Input Capacitance: 927pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 22 mOhm @ 7.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS4488 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS4488
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS4488
MOSFET N-CH 30V 7.9A 8SOIC

MOSFET N-CH 30V 7.9A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDS4488CT-ND 016141-FDS4488 FDS4488
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4488 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 2500 milliwatts
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