onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4470 FDS4470

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 126126-FDS4470 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: FDS4470 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 12.5A (Ta) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 2659pF @ 20V Maximum Gate-Source Voltage: +30V, -20V Maximum Rds On at Id,Vgs: 9 mOhm @ 12.5A, 10V Alternative Parts (Cross-Reference): UPA1709G-E1; uPA1709G; STS15N4LLF5; TPC8047-H; Introduction Date: December 12, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 126126-FDS4470 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: FDS4470 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 12.5A (Ta) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 2659pF @ 20V Maximum Gate-Source Voltage: +30V, -20V Maximum Rds On at Id,Vgs: 9 mOhm @ 12.5A, 10V Alternative Parts (Cross-Reference): UPA1709G-E1; uPA1709G; STS15N4LLF5; TPC8047-H; Introduction Date: December 12, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial Quantity per package: 2,500
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4470 - 126126-FDS4470 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4470
126126-FDS4470
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4470 126126-FDS4470
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 126126-FDS4470 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: FDS4470 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 12.5A (Ta) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 2659pF @ 20V Maximum Gate-Source Voltage: +30V, -20V Maximum Rds On at Id,Vgs: 9 mOhm @ 12.5A, 10V Alternative Parts (Cross-Reference): UPA1709G-E1; uPA1709G; STS15N4LLF5; TPC8047-H; Introduction Date: December 12, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 126126-FDS4470
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: FDS4470
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 12.5A (Ta)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 2659pF @ 20V
Maximum Gate-Source Voltage: +30V, -20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 12.5A, 10V
Alternative Parts (Cross-Reference): UPA1709G-E1; uPA1709G; STS15N4LLF5; TPC8047-H;
Introduction Date: December 12, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDS4470FSCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS4470FSCT-ND
Single FETs, MOSFETs FDS4470FSCT-ND
N-Channel 40V 12.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 40V 12.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - FDS4470FSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS4470FSTR-ND
Single FETs, MOSFETs FDS4470FSTR-ND
N-Channel 40V 12.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 40V 12.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FDS4470
MOSFET FDS4470
MOSFET SO-8

MOSFET SO-8

Buy Now Datasheet
N Channel Mosfet, 40V, 12.5A, Soic; Channel Type Onsemi - 78K5930 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 40V, 12.5A, Soic; Channel Type Onsemi
78K5930
N Channel Mosfet, 40V, 12.5A, Soic; Channel Type Onsemi 78K5930
N CHANNEL MOSFET, 40V, 12.5A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:12.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.9V RoHS Compliant: Yes

N CHANNEL MOSFET, 40V, 12.5A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:12.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.9V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet Transistor, N Channel, 12.5 A, 40 V, 0.006 Ohm, 10 V, 3.9 V Rohs Compliant Onsemi - 31Y1394 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 12.5 A, 40 V, 0.006 Ohm, 10 V, 3.9 V Rohs Compliant Onsemi
31Y1394
Mosfet Transistor, N Channel, 12.5 A, 40 V, 0.006 Ohm, 10 V, 3.9 V Rohs Compliant Onsemi 31Y1394
MOSFET Transistor, N Channel, 12.5 A, 40 V, 0.006 ohm, 10 V, 3.9 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 12.5 A, 40 V, 0.006 ohm, 10 V, 3.9 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS4470 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS4470
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS4470
MOSFET N-CH 40V 12.5A 8SOIC

MOSFET N-CH 40V 12.5A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 126126-FDS4470 FDS4470FSCT-ND FDS4470 78K5930 31Y1394 FDS4470
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4470 Single FETs, MOSFETs MOSFET N Channel Mosfet, 40V, 12.5A, Soic; Channel Type Onsemi Mosfet Transistor, N Channel, 12.5 A, 40 V, 0.006 Ohm, 10 V, 3.9 V Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 40 volts
PD 2500 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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