MOSFET P-CH 20V 13.5A 8SOIC
MOSFETs SO-8 Product overview: FDS4465 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS4465 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016139-FDS4465
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 13.5A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 120nC @ 4.5V
Max Input Capacitance: 8237pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 13.5A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
P-Channel 20V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 20V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 20V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
MOSFET P-CH 20V 13.5A 8SOIC
(PRICE/TC),P CHANNEL MOSFET, -20V, 13.5A, SOIC, TRANSISTOR POLARITY:P CHANNEL, DRAIN SOURCE VOLTAGE VDS:20V, CONTINUOUS DRAIN CURRENT ID:13.5A, ON RESISTANCE RDS(ON):0.0067OHM, TRANSISTOR MOUNTING:SURFACE MOUNT, RDS(ON) TEST VOLTAGE VGS:4.5V ROHS COMPLIAN. FREE 2 YEAR RADWELL WARRANTY
P CHANNEL MOSFET, -20V, 13.5A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:13.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV RoHS Compliant: Yes
MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:13.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV; Power Dissipation:2.5WRoHS
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS4465 | 6710517P | 6710517 | 2088-FDS4465 | 016139-FDS4465 | FDS4465CT-ND | FDS4465 | FDS4465 | 16130376 | 34C0164 | 67R2068 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4465 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | P Channel Mosfet, -20V, 13.5A, Soic; Channel Type Onsemi | Mosfet, Full Reel; Channel Type Onsemi |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||||
| V(BR)DSS | 20 volts | 20 volts | |||||||||
| IDSS | 13500 milliamps | 13500 milliamps | 13500 milliamps | ||||||||
| PD | 2500 milliwatts | 2.5 milliwatts | 2500 milliwatts | 2500 milliwatts |
