P-Channel 20V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 20V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 20V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
MOSFET P-CH 20V 13.5A 8SOIC
(PRICE/TC),P CHANNEL MOSFET, -20V, 13.5A, SOIC, TRANSISTOR POLARITY:P CHANNEL, DRAIN SOURCE VOLTAGE VDS:20V, CONTINUOUS DRAIN CURRENT ID:13.5A, ON RESISTANCE RDS(ON):0.0067OHM, TRANSISTOR MOUNTING:SURFACE MOUNT, RDS(ON) TEST VOLTAGE VGS:4.5V ROHS COMPLIAN. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016139-FDS4465
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 13.5A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 120nC @ 4.5V
Max Input Capacitance: 8237pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 13.5A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
MOSFET P-CH 20V 13.5A 8SOIC
P CHANNEL MOSFET, -20V, 13.5A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:13.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV RoHS Compliant: Yes
MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:13.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV; Power Dissipation:2.5WRoHS
| DigiKey | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Radwell International | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS4465CT-ND | 6710517P | 6710517 | FDS4465 | 16130376 | 016139-FDS4465 | FDS4465 | FDS4465 | 34C0164 | 67R2068 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4465 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -20V, 13.5A, Soic; Channel Type Onsemi | Mosfet, Full Reel; Channel Type Onsemi |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOIC | Soic | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | 8-SOIC (0.154, 3.90mm Width) | TO-3 | TO-3 | ||
| MOSFET Operating Mode | Enhancement | |||||||||
| Number of units in IC | 1 | |||||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
