The P-Channel MOSFET, part number FDS4435BZ, is designed for applications requiring a maximum drain-source voltage of -30V and a continuous drain current of -8.8A. It features a low on-state resistance, with a maximum R_DS(on) of 20mOc at a gate-source voltage of -10V and a drain current of -8.8A. The device is suitable for power management and load switching applications, particularly in notebook computers and portable battery packs. It has an extended gate-source voltage range of -25V, making it suitable for battery applications. The MOSFET is housed in a SO-8 package and is RoHS compliant, ensuring it meets environmental standards. Additionally, it offers a high level of ESD protection with a typical HBM rating of ¬±3.8kV. The operating junction temperature range is from -55¬8C to +150¬8C, providing versatility in various thermal environments.
MOSFET P-CH 30V 8.8A 8SOIC
MOSFETs 30V.PCH POWER TRENCH MOSFET Product overview: FDS4435BZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS4435BZ can be used for catalog matching and distributor lookup.
P-Channel 30V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 30V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 30V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016137-FDS4435BZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: FDS4435BZ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.8A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1845pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 20 mOhm @ 8.8A, 10V
Alternative Parts (Cross-Reference): FDS4435BZ_F085; TSM4835CSRL; TSM4835CS;
Introduction Date: July 19, 2005
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Consumer Electronics
Quantity per package: 2,500
MOSFET 30V.PCH POWER TRENCH MOSFET
MOSFET Transistor, P Channel, -8.8 A, -30 V, 0.016 ohm, -10 V, -2.1 V RoHS Compliant: Yes
P CHANNEL MOSFET, -30V, 8.8A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes
P CHANNEL MOSFET, -30V, 8.8A, SOIC, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.5W RoHS Compliant: Yes
30V 8.8A 20mΩ@10V,8.8A 2.5W 3V@250uA P Channel SOIC-8 MOSFETs ROHS
MOSFET P-CH 30V 8.8A 8SOIC
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDS4435BZ | 6710508 | 6710508P | 2088-FDS4435BZ | FDS4435BZTR-ND | 016137-FDS4435BZ | FDS4435BZ | 31Y1393 | 67P3483 | 86K1379 | FDS4435BZ | FDS4435BZ |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | 30V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4435BZ | MOSFET | Mosfet Transistor, P Channel, -8.8 A, -30 V, 0.016 Ohm, -10 V, -2.1 V Rohs Compliant Onsemi | P Channel Mosfet, -30V, 8.8A, Soic; Channel Type Onsemi | P Channel Mosfet, -30V, 8.8A, Soic, Full Reel; Channel Type Onsemi | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||||||
| IDSS | 8800 milliamps | 8800 milliamps | 8800 milliamps | |||||||||
| PD | 2500 milliwatts | 2.5 milliwatts | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts |
