onsemi FETs - Single - FDS4435 FDS4435

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1173897-FDS4435 Packaging: Cut Tape (CT) Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Family Name: FDS4435 Categories: Discrete Semiconductor Products Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2.5W Alternative Parts (Cross-Reference): Si4441EDY-T1-E3; TSM4835CS RL; Si4835DY; Si4835DY-E3; Introduction Date: October 08, 1999 ECCN: EAR99 Country of Origin: China, Malaysia, Philippines, Taiwan, Thailand Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 8.8A Rds On (Maximum) at Id, Vgs: 20mOhm at 8.8A, 10V Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 24nC at 5V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1604pF at 15V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1173897-FDS4435 Packaging: Cut Tape (CT) Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Family Name: FDS4435 Categories: Discrete Semiconductor Products Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2.5W Alternative Parts (Cross-Reference): Si4441EDY-T1-E3; TSM4835CS RL; Si4835DY; Si4835DY-E3; Introduction Date: October 08, 1999 ECCN: EAR99 Country of Origin: China, Malaysia, Philippines, Taiwan, Thailand Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 8.8A Rds On (Maximum) at Id, Vgs: 20mOhm at 8.8A, 10V Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 24nC at 5V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1604pF at 15V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - FDS4435 - 1173897-FDS4435 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FDS4435
1173897-FDS4435
FETs - Single - FDS4435 1173897-FDS4435
Manufacturer: ON Semiconductor Win Source Part Number: 1173897-FDS4435 Packaging: Cut Tape (CT) Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Family Name: FDS4435 Categories: Discrete Semiconductor Products Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2.5W Alternative Parts (Cross-Reference): Si4441EDY-T1-E3; TSM4835CS RL; Si4835DY; Si4835DY-E3; Introduction Date: October 08, 1999 ECCN: EAR99 Country of Origin: China, Malaysia, Philippines, Taiwan, Thailand Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 8.8A Rds On (Maximum) at Id, Vgs: 20mOhm at 8.8A, 10V Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 24nC at 5V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1604pF at 15V

Manufacturer: ON Semiconductor
Win Source Part Number: 1173897-FDS4435
Packaging: Cut Tape (CT)
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Family Name: FDS4435
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 2.5W
Alternative Parts (Cross-Reference): Si4441EDY-T1-E3; TSM4835CS RL; Si4835DY; Si4835DY-E3;
Introduction Date: October 08, 1999
ECCN: EAR99
Country of Origin: China, Malaysia, Philippines, Taiwan, Thailand
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 8.8A
Rds On (Maximum) at Id, Vgs: 20mOhm at 8.8A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 24nC at 5V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1604pF at 15V

Buy Now Datasheet
Single FETs, MOSFETs - FDS4435TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS4435TR-ND
Single FETs, MOSFETs FDS4435TR-ND
P-Channel 30V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

P-Channel 30V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS4435 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS4435
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS4435
MOSFET P-CH 30V 8.8A 8SOIC

MOSFET P-CH 30V 8.8A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1173897-FDS4435 FDS4435TR-ND FDS4435
Product Name FETs - Single - FDS4435 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 30 volts
PD 2500 milliwatts
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