Mosfet Array 2 N-Channel (Dual) 80V 4.7A 900mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 80V 4.7A 900mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 80V 4.7A 900mW Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016136-FDS3890
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 4.7A
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1180pF @ 40V
Maximum Rds On at Id,Vgs: 44 mOhm @ 4.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Quantity per package: 2,500
MOSFET 2N-CH 80V 4.7A 8-SO
MOSFET 2N-CH 80V 4.7A 8SOIC
N CHANNEL MOSFET, 80V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:4.7A; On Resistance Rds(on):0.034ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V RoHS Compliant: Yes
N CHANNEL MOSFET, 80V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:4.7A; On Resistance Rds(on):0.034ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; No. of Pins:8PinsRoHS Compliant: Yes
Dual MOSFET, Dual N Channel, 4.7 A, 80 V, 0.034 ohm, 10 V, 2.3 V RoHS Compliant: Yes
| DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS3890DKR-ND | 016136-FDS3890 | 8063630P | 8063630 | FDS3890 | FDS3890 | FDS3890 | 34C0162 | 87X8731 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3890 | MOSFETs | MOSFETs | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 80V, Soic, Full Reel; Transistor Polarity Onsemi | Dual Mosfet, Dual N Channel, 4.7 A, 80 V, 0.034 Ohm, 10 V, 2.3 V Rohs Compliant Onsemi |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | SOIC | Soic | 8-SOIC (0.154", 3.90mm Width) | TO-3 | TO-3 | ||
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| V(BR)DSS | 80 volts | 80 volts | |||||||
| PD | 900 milliwatts | ||||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
