MOSFETs SO-8 Product overview: FDS3890 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS3890 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 80V 4.7A 900mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 80V 4.7A 900mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 80V 4.7A 900mW Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016136-FDS3890
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 4.7A
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1180pF @ 40V
Maximum Rds On at Id,Vgs: 44 mOhm @ 4.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Quantity per package: 2,500
MOSFET 2N-CH 80V 4.7A 8-SO
N CHANNEL MOSFET, 80V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:4.7A; On Resistance Rds(on):0.034ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V RoHS Compliant: Yes
N CHANNEL MOSFET, 80V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:4.7A; On Resistance Rds(on):0.034ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; No. of Pins:8PinsRoHS Compliant: Yes
Dual MOSFET, Dual N Channel, 4.7 A, 80 V, 0.034 ohm, 10 V, 2.3 V RoHS Compliant: Yes
MOSFET 2N-CH 80V 4.7A 8SOIC
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2088-FDS3890 | FDS3890DKR-ND | 016136-FDS3890 | 8063630P | 8063630 | FDS3890 | 34C0162 | 87X8731 | FDS3890 | FDS3890 |
| Product Name | MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3890 | MOSFETs | MOSFETs | FET, MOSFET Arrays | N Channel Mosfet, 80V, Soic, Full Reel; Transistor Polarity Onsemi | Dual Mosfet, Dual N Channel, 4.7 A, 80 V, 0.034 Ohm, 10 V, 2.3 V Rohs Compliant Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||
| Transconductance | 0.0240 kS | |||||||||
| PD | 2 milliwatts | 900 milliwatts | ||||||||
| Package Type | Reel | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | SOIC | Soic | 8-SOIC (0.154", 3.90mm Width) | TO-3 | TO-3 |
