onsemi FET, MOSFET Arrays FDS3812

Mosfet Array 2 N-Channel (Dual) 80V 3.4A 900mW Surface Mount 8-SOIC

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067076-FDS3812
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 3.4A
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 634pF @ 40V
Maximum Rds On at Id,Vgs: 74 mOhm @ 3.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

2N-CH MOSFET 80V 3.4A 74mR SOIC Product overview: FDS3812 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 3.4A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 3.4A, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS3812 can be used for catalog matching and distributor lookup.