onsemi Single FETs, MOSFETs FDS3680

Description
N-Channel 100V 5.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
N-Channel 100V 5.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDS3680-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS3680-ND
Single FETs, MOSFETs FDS3680-ND
N-Channel 100V 5.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 100V 5.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3680 - 067074-FDS3680 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3680
067074-FDS3680
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3680 067074-FDS3680
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067074-FDS3680 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.2A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 53nC @ 10V Max Input Capacitance: 1735pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 46 mOhm @ 5.2A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067074-FDS3680
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 5.2A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 1735pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 46 mOhm @ 5.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
100V 5.2A SOIC MOSFET Transistor
278-FDS3680
100V 5.2A SOIC MOSFET Transistor 278-FDS3680
MOSFET N-CH 100V 5.2A 8-SOIC Product overview: FDS3680 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.2A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS3680 can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 5.2A 8-SOIC Product overview: FDS3680 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.2A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS3680 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS3680 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS3680
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS3680
MOSFET N-CH 100V 5.2A 8SOIC

MOSFET N-CH 100V 5.2A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDS3680-ND 067074-FDS3680 278-FDS3680 FDS3680
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3680 100V 5.2A SOIC MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154, 3.90mm Width)
V(BR)DSS 100 volts
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