The N Channel MOSFET, part number FDS3672, is rated for a maximum drain-source voltage of 100V and a continuous drain current of 7.5A. It features a low on-resistance of 19m,Ѷ at a gate-source voltage of 10V, which contributes to efficient performance in power applications. The total gate charge is approximately 28nC, making it suitable for high-frequency applications. This MOSFET is designed for use in DC/DC converters, off-line UPS systems, and as a primary switch in 24V and 48V systems. The device is housed in a SO-8 package, facilitating surface mount applications. It is RoHS compliant, ensuring it meets environmental standards.
MOSFETs 100V 7.5a .22 Ohms/VGS=1V Product overview: FDS3672 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 7.5a, 1V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 7.5a, 1V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS3672 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016135-FDS3672
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: FDS3672
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 7.5A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 37nC @ 10V
Max Input Capacitance: 2015pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 23 mOhm @ 7.5A, 10V
Alternative Parts (Cross-Reference): AO4292; Si4486EY; SI4486EY-E3; Si4486EY-T1;
Introduction Date: February 11, 2002
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
N-Channel 100V 7.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 100V 7.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 100V 7.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
MOSFET N-CH 100V 7.5A 8SOIC
N CHANNEL MOSFET, 100V, 7.5A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 7.5 A, 100 V, 0.019 ohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:2.5W RoHS Compliant: Yes
N CHANNEL MOSFET, 100V, 7.5A, SOIC; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:7.5A; DRAIN SOURCE VOLTAGE VDS:100V; ON RESISTANCE RDS(ON):0.019OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2088-FDS3672 | 6710491P | 1662601 | 016135-FDS3672 | FDS3672CT-ND | FDS3672 | FDS3672 | 58K1476 | 61M6297 | 67R2067 | 16115214 |
| Product Name | 100V 7.5a 1V MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3672 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 100V, 7.5A, Soic; Channel Type Onsemi | Mosfet Transistor, N Channel, 7.5 A, 100 V, 0.019 Ohm, 10 V, 4 V Rohs Compliant Onsemi | Mosfet, Full Reel; Channel Type Onsemi | Transistor |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||||
| PD | 2.5 milliwatts | 2500 milliwatts | 2500 milliwatts | ||||||||
| Package Type | Reel | SOIC | Soic | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154, 3.90mm Width) | TO-3 | TO-3 | TO-3 | ||
| Packing Method | Reel | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
