onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3601 FDS3601

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067072-FDS3601
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.3A
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 5nC @ 10V
Max Input Capacitance: 153pF @ 50V
Maximum Rds On at Id,Vgs: 480 mOhm @ 1.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial

100V N-Channel Dual MOSFET, SOIC, 1.3A, 480mR Product overview: FDS3601 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 100V, 1.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 100V, 1.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS3601 can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Dual) 100V 1.3A 900mW Surface Mount 8-SOIC