Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016134-FDS3590
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 6.5A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1180pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 39 mOhm @ 6.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
N-Channel 80V 6.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 80V 6.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 80V 6.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
MOSFET N-CH 80V 6.5A 8SOIC
MOSFET N-CH 80V 6.5A 8SOIC
N CHANNEL MOSFET, 80V, 6.5A, SOIC, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:6.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 016134-FDS3590 | FDS3590TR-ND | FDS3590 | FDS3590 | FDS3590 | 78K5928 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3590 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 80V, 6.5A, Soic, Full Reel; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 80 volts | 80 volts | ||||
| PD | 2500 milliwatts | 2500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
