onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3580 FDS3580

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038372-FDS3580 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 7.6A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 29 mOhm @ 7.6A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038372-FDS3580 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 7.6A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 29 mOhm @ 7.6A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3580 - 1038372-FDS3580 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3580
1038372-FDS3580
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3580 1038372-FDS3580
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038372-FDS3580 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 7.6A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 29 mOhm @ 7.6A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038372-FDS3580
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 7.6A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 1800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 29 mOhm @ 7.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDS3580FSCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS3580FSCT-ND
Single FETs, MOSFETs FDS3580FSCT-ND
N-Channel 80V 7.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 80V 7.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - FDS3580FSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS3580FSDKR-ND
Single FETs, MOSFETs FDS3580FSDKR-ND
N-Channel 80V 7.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 80V 7.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - FDS3580FSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS3580FSTR-ND
Single FETs, MOSFETs FDS3580FSTR-ND
N-Channel 80V 7.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 80V 7.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS3580 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS3580
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS3580
MOSFET N-CH 80V 7.6A 8SOIC

MOSFET N-CH 80V 7.6A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDS3580
MOSFET FDS3580
MOSFET SO-8 N-CH 80V

MOSFET SO-8 N-CH 80V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1038372-FDS3580 FDS3580FSCT-ND FDS3580 FDS3580
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3580 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 80 volts
PD 2500 milliwatts
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