onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3570 FDS3570

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067071-FDS3570 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 9A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 76nC @ 10V Max Input Capacitance: 2750pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067071-FDS3570 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 9A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 76nC @ 10V Max Input Capacitance: 2750pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3570 - 067071-FDS3570 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3570
067071-FDS3570
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3570 067071-FDS3570
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067071-FDS3570 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 9A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 76nC @ 10V Max Input Capacitance: 2750pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067071-FDS3570
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 9A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 76nC @ 10V
Max Input Capacitance: 2750pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - FDS3570 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDS3570
Single FETs, MOSFETs FDS3570
MOSFET N-CH 80V 9A 8SOIC

MOSFET N-CH 80V 9A 8SOIC

Supplier's Site Datasheet
Single FETs, MOSFETs - FDS3570 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDS3570
Single FETs, MOSFETs FDS3570
MOSFET N-CH 80V 9A 8SOIC

MOSFET N-CH 80V 9A 8SOIC

Supplier's Site
Single FETs, MOSFETs - FDS3570-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS3570-ND
Single FETs, MOSFETs FDS3570-ND
N-Channel 80V 9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 80V 9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS3570 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS3570
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS3570
MOSFET N-CH 80V 9A 8SOIC

MOSFET N-CH 80V 9A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 067071-FDS3570 FDS3570 FDS3570-ND FDS3570
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3570 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 80 volts 80 volts
PD 2500 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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