MOSFET N-CH 100V 6.7A 8SO Product overview: FDS3170N7 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 6.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 6.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS3170N7 can be used for catalog matching and distributor lookup.
N-Channel 100V 6.7A (Ta) 3W (Ta) Surface Mount 8-SO
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 100227-FDS3170N7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 6.7A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 77nC @ 10V
Max Input Capacitance: 2714pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 6.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Automotive
MOSFET N-CH 100V 6.7A 8SO
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-FDS3170N7 | FDS3170N7TR-ND | 100227-FDS3170N7 | FDS3170N7 |
| Product Name | 100V 6.7A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3170N7 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 3000 milliwatts | 3000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Bulk | "8-SOIC (0.154"", 3.90mm Width) Exposed Pad" | SOT3; 8-SO | 8-SOIC (0.154, 3.90mm Width) Exposed Pad |