MOSFET N-CH 200V 3.9A 8SOIC
POWER FIELD-EFFECT TRANSISTOR, 3
N-Channel 200V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 200V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 200V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 133486-FDS2672
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3.9A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 2535pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 70 mOhm @ 3.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
MOSFETs 200V 3.9A 70mOHMS NCH ULTRAFET Product overview: FDS2672 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 3.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 3.9A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS2672 can be used for catalog matching and distributor lookup.
MOSFET N-CH 200V 3.9A 8SOIC
MOSFET 200V 3.9A 70mOHMS NCH ULTRAFET
MOSFET Transistor, N Channel, 3.9 A, 200 V, 0.059 ohm, 10 V, 2.9 V RoHS Compliant: Yes
N CHANNEL MOSFET, 200V, 3.9A, SOIC, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.5W RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS2672 | FDS2672CT-ND | 133486-FDS2672 | 2088-FDS2672 | FDS2672 | FDS2672 | 31Y1388 | 20M1182 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS2672 | 200V 3.9A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet Transistor, N Channel, 3.9 A, 200 V, 0.059 Ohm, 10 V, 2.9 V Rohs Compliant Onsemi | N Channel Mosfet, 200V, 3.9A, Soic, Full Reel; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 200 volts | 200 volts | ||||||
| IDSS | 3900 milliamps | 3900 milliamps | ||||||
| PD | 2500 milliwatts | 2500 milliwatts | 2.5 milliwatts | 2500 milliwatts |
