onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS2582 FDS2582

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016130-FDS2582 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 4.1A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 1290pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 66 mOhm @ 4.1A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Automotive Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016130-FDS2582 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 4.1A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 1290pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 66 mOhm @ 4.1A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Automotive Quantity per package: 2,500
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS2582 - 016130-FDS2582 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS2582
016130-FDS2582
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS2582 016130-FDS2582
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016130-FDS2582 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 4.1A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 1290pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 66 mOhm @ 4.1A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Automotive Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016130-FDS2582
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 4.1A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 1290pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 66 mOhm @ 4.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Automotive
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDS2582CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS2582CT-ND
Single FETs, MOSFETs FDS2582CT-ND
N-Channel 150V 4.1A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 150V 4.1A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - FDS2582TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS2582TR-ND
Single FETs, MOSFETs FDS2582TR-ND
N-Channel 150V 4.1A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 150V 4.1A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

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Single FETs, MOSFETs - FDS2582DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS2582DKR-ND
Single FETs, MOSFETs FDS2582DKR-ND
N-Channel 150V 4.1A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 150V 4.1A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

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Single FETs, MOSFETs - FDS2582 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDS2582
Single FETs, MOSFETs FDS2582
MOSFET N-CH 150V 4.1A 8SOIC

MOSFET N-CH 150V 4.1A 8SOIC

Supplier's Site Datasheet
Singapore
150V 4.5a 1V MOSFET Transistor
2088-FDS2582
150V 4.5a 1V MOSFET Transistor 2088-FDS2582
MOSFETs 150V 4.5a .6 Ohms/VGS=1V Product overview: FDS2582 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 4.5a, 1V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 4.5a, 1V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS2582 can be used for catalog matching and distributor lookup.

MOSFETs 150V 4.5a .6 Ohms/VGS=1V Product overview: FDS2582 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 4.5a, 1V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 4.5a, 1V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS2582 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
N Channel Mosfet, 150V, 4.1A, Soic; Channel Type Onsemi - 28H9709 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 150V, 4.1A, Soic; Channel Type Onsemi
28H9709
N Channel Mosfet, 150V, 4.1A, Soic; Channel Type Onsemi 28H9709
N CHANNEL MOSFET, 150V, 4.1A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:4.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 150V, 4.1A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:4.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Channel, 150V, 4.1A, Soic-8; Channel Type Onsemi - 29X6693 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 150V, 4.1A, Soic-8; Channel Type Onsemi
29X6693
Mosfet, N Channel, 150V, 4.1A, Soic-8; Channel Type Onsemi 29X6693
MOSFET, N CHANNEL, 150V, 4.1A, SOIC-8; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:4.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N CHANNEL, 150V, 4.1A, SOIC-8; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:4.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET
FDS2582
MOSFET FDS2582
MOSFET 150V 4.5a .6 Ohms/VGS=1V

MOSFET 150V 4.5a .6 Ohms/VGS=1V

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Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016130-FDS2582 FDS2582CT-ND FDS2582 2088-FDS2582 28H9709 FDS2582
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS2582 Single FETs, MOSFETs Single FETs, MOSFETs 150V 4.5a 1V MOSFET Transistor N Channel Mosfet, 150V, 4.1A, Soic; Channel Type Onsemi MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 150 volts 150 volts
PD 2500 milliwatts 2500 milliwatts 2.5 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) Reel TO-3
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