Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016129-FDS2572
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: FDS2572
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 4.9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 2050pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 47 mOhm @ 4.9A, 10V
Alternative Parts (Cross-Reference): IRF7494TRPBF; IRF7494PbF; IRF7815PBF;
Introduction Date: October 04, 2001
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Communications & Networking, Industrial
Quantity per package: 2,500
N-Channel 150V 4.9A (Tc) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 150V 4.9A (Tc) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 150V 4.9A (Tc) 2.5W (Ta) Surface Mount 8-SOIC
MOSFET N-CH 150V 4.9A 8SOIC
MOSFET Transistor, N Channel, 4.9 A, 150 V, 0.04 ohm, 10 V, 4 V RoHS Compliant: Yes
N CHANNEL MOSFET, 150V, 4.9A, SOIC, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:4.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4VRoHS Compliant: Yes
MOSFET, N CHANNEL, 150V, 0.04OHM, 4.9A, SOIC-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:4.9A; On Resistance Rds(on):0.04ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET N-CH 150V 4.9A 8SOIC
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 016129-FDS2572 | FDS2572TR-ND | FDS2572 | 96K9876 | 58K1475 | 84W8865 | FDS2572 | FDS2572 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS2572 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 4.9 A, 150 V, 0.04 Ohm, 10 V, 4 V Rohs Compliant Onsemi | N Channel Mosfet, 150V, 4.9A, Soic, Full Reel; Channel Type Onsemi | Mosfet, N Channel, 150V, 0.04Ohm, 4.9A, Soic-8; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 150 volts | 150 volts | ||||||
| PD | 2500 milliwatts | 2500 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | TO-3 | TO-3 | TO-3 | 8-SOIC (0.154, 3.90mm Width) |
