MOSFET N-CH 200V 3A 8-SOIC Product overview: FDS2170N7 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 3A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS2170N7 can be used for catalog matching and distributor lookup.
N-Channel 200V 3A (Ta) 3W (Ta) Surface Mount 8-SO
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 117619-FDS2170N7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 1292pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 128 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Communications & Networking, Industrial
MOSFET N-CH 200V 3A 8SOIC
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-FDS2170N7 | FDS2170N7TR-ND | 117619-FDS2170N7 | FDS2170N7 |
| Product Name | 200V 3A SOIC MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS2170N7 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |
| PD | 3000 milliwatts | 3000 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |