onsemi Single FETs, MOSFETs FDS2170N3

Description
N-Channel 200V 3A (Ta) 3W (Ta) Surface Mount 8-SO
Request a Quote Datasheet
Description
N-Channel 200V 3A (Ta) 3W (Ta) Surface Mount 8-SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDS2170N3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS2170N3TR-ND
Single FETs, MOSFETs FDS2170N3TR-ND
N-Channel 200V 3A (Ta) 3W (Ta) Surface Mount 8-SO

N-Channel 200V 3A (Ta) 3W (Ta) Surface Mount 8-SO

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS2170N3 - 140691-FDS2170N3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS2170N3
140691-FDS2170N3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS2170N3 140691-FDS2170N3
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 140691-FDS2170N3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 1292pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 128 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 140691-FDS2170N3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 1292pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 128 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS2170N3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS2170N3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS2170N3
MOSFET N-CH 200V 3A 8SOIC

MOSFET N-CH 200V 3A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDS2170N3TR-ND 140691-FDS2170N3 FDS2170N3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS2170N3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width) Exposed Pad" SOT3; 8-SOIC 8-SOIC (0.154, 3.90mm Width) Exposed Pad
V(BR)DSS 200 volts
Unlock Full Specs
to access all available technical data

Similar Products

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UJ4SC075009K4S - Acme Chip Technology Co., Limited
Specs
Package Type TO-247; TO-247-4
Packing Method Tube; Tube
View Details
GaAs Fet Switches - KCB817 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 6000 MHz
View Details
Single FETs, MOSFETs - AUIRF3205ZSTRLTR-ND - DigiKey
Specs
Polarity N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Grade / Operating Range Automotive
View Details
6 suppliers