onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8702H FDR8702H

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067070-FDR8702H Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-8 Maximum Power Dissipation: 800mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.6A, 2.6A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 650pF @ 10V Maximum Rds On at Id,Vgs: 38 mOhm @ 3.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067070-FDR8702H Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-8 Maximum Power Dissipation: 800mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.6A, 2.6A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 650pF @ 10V Maximum Rds On at Id,Vgs: 38 mOhm @ 3.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8702H - 067070-FDR8702H - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8702H
067070-FDR8702H
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8702H 067070-FDR8702H
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067070-FDR8702H Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-8 Maximum Power Dissipation: 800mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.6A, 2.6A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 650pF @ 10V Maximum Rds On at Id,Vgs: 38 mOhm @ 3.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067070-FDR8702H
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-8
Maximum Power Dissipation: 800mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.6A, 2.6A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 650pF @ 10V
Maximum Rds On at Id,Vgs: 38 mOhm @ 3.6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDR8702H - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDR8702H
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDR8702H
MOSFET N/P-CH 20V 3.6A SUPERSOT

MOSFET N/P-CH 20V 3.6A SUPERSOT

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 067070-FDR8702H FDR8702H
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8702H Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel
V(BR)DSS 20 volts
PD 800 milliwatts
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