Trans MOSFET P-CH 30V 3A 8-Pin SuperSOT T/R Product overview: FDR8508P from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDR8508P can be used for catalog matching and distributor lookup.
Mosfet Array 2 P-Channel (Dual) 30V 3A 800mW Surface Mount SuperSOT™-8
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067069-FDR8508P
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-8
Maximum Power Dissipation: 800mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 12nC @ 5V
Max Input Capacitance: 750pF @ 15V
Maximum Rds On at Id,Vgs: 52 mOhm @ 3A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
MOSFET 2P-CH 30V 3A SUPERSOT 8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-FDR8508P | FDR8508P-ND | 067069-FDR8508P | FDR8508P |
| Product Name | 30V 3A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8508P | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | ||
| PD | 800 milliwatts | 800 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |