onsemi FET, MOSFET Arrays FDR8508P

Description
Mosfet Array 2 P-Channel (Dual) 30V 3A 800mW Surface Mount SuperSOT™-8
Request a Quote Datasheet
Description
Mosfet Array 2 P-Channel (Dual) 30V 3A 800mW Surface Mount SuperSOT™-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDR8508P-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDR8508P-ND
FET, MOSFET Arrays FDR8508P-ND
Mosfet Array 2 P-Channel (Dual) 30V 3A 800mW Surface Mount SuperSOT™-8

Mosfet Array 2 P-Channel (Dual) 30V 3A 800mW Surface Mount SuperSOT™-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8508P - 067069-FDR8508P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8508P
067069-FDR8508P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8508P 067069-FDR8508P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067069-FDR8508P Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-8 Maximum Power Dissipation: 800mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 12nC @ 5V Max Input Capacitance: 750pF @ 15V Maximum Rds On at Id,Vgs: 52 mOhm @ 3A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067069-FDR8508P
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-8
Maximum Power Dissipation: 800mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 12nC @ 5V
Max Input Capacitance: 750pF @ 15V
Maximum Rds On at Id,Vgs: 52 mOhm @ 3A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDR8508P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDR8508P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDR8508P
MOSFET 2P-CH 30V 3A SUPERSOT 8

MOSFET 2P-CH 30V 3A SUPERSOT 8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDR8508P-ND 067069-FDR8508P FDR8508P
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8508P Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-LSOP (0.130"", 3.30mm Width)" SOT3; SuperSOT-8
Polarity P-Channel
V(BR)DSS 30 volts
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