Trans MOSFET P-CH 12V 11A 8-Pin SuperSOT T/R Product overview: FDR842P from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDR842P can be used for catalog matching and distributor lookup.
P-Channel 12V 11A (Ta) 1.8W (Ta) Surface Mount SuperSOT™-8
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038369-FDR842P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-8
Dimension: 8-SMD, Gull Wing
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 80nC @ 4.5V
Max Input Capacitance: 5350pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 9 mOhm @ 11A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
MOSFET P-CH 12V 11A SUPERSOT8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-FDR842P | FDR842PTR-ND | 1038369-FDR842P | FDR842P |
| Product Name | 12V 11A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR842P | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | |
| PD | 1800 milliwatts | 1800 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |