onsemi FET, MOSFET Arrays FDR8308P

Description
Mosfet Array 2 P-Channel (Dual) 20V 3.2A 800mW Surface Mount SuperSOT™-8
Request a Quote Datasheet
Description
Mosfet Array 2 P-Channel (Dual) 20V 3.2A 800mW Surface Mount SuperSOT™-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDR8308PTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDR8308PTR-ND
FET, MOSFET Arrays FDR8308PTR-ND
Mosfet Array 2 P-Channel (Dual) 20V 3.2A 800mW Surface Mount SuperSOT™-8

Mosfet Array 2 P-Channel (Dual) 20V 3.2A 800mW Surface Mount SuperSOT™-8

Buy Now Datasheet
Singapore
20V 3.2A MOSFET Transistor
289-FDR8308P
20V 3.2A MOSFET Transistor 289-FDR8308P
MOSFET 2P-CH 20V 3.2A SUPERSOT-8 Product overview: FDR8308P from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDR8308P can be used for catalog matching and distributor lookup.

MOSFET 2P-CH 20V 3.2A SUPERSOT-8 Product overview: FDR8308P from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDR8308P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8308P - 117457-FDR8308P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8308P
117457-FDR8308P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8308P 117457-FDR8308P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 117457-FDR8308P Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-8 Maximum Power Dissipation: 800mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.2A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 19nC @ 4.5V Max Input Capacitance: 1240pF @ 10V Maximum Rds On at Id,Vgs: 50 mOhm @ 3.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 117457-FDR8308P
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-8
Maximum Power Dissipation: 800mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.2A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 19nC @ 4.5V
Max Input Capacitance: 1240pF @ 10V
Maximum Rds On at Id,Vgs: 50 mOhm @ 3.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDR8308P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDR8308P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDR8308P
MOSFET 2P-CH 20V 3.2A SUPERSOT-8

MOSFET 2P-CH 20V 3.2A SUPERSOT-8

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDR8308PTR-ND 289-FDR8308P 117457-FDR8308P FDR8308P
Product Name FET, MOSFET Arrays 20V 3.2A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8308P Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-LSOP (0.130"", 3.30mm Width)" Bulk SOT3; SuperSOT-8
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Packing Method Bulk Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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