Mosfet Array 2 N-Channel (Dual) 20V 4.5A 800mW Surface Mount SuperSOT™-8
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038367-FDR8305N
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-8
Maximum Power Dissipation: 800mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 23nC @ 4.5V
Max Input Capacitance: 1600pF @ 10V
Maximum Rds On at Id,Vgs: 22 mOhm @ 4.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 20V 4.5A SUPERSOT-8
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDR8305N-ND | 1038367-FDR8305N | FDR8305N |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8305N | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | "8-LSOP (0.130"", 3.30mm Width)" | SOT3; SuperSOT-8 | |
| Polarity | N-Channel | ||
| V(BR)DSS | 20 volts |
