onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8305N FDR8305N

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038367-FDR8305N Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-8 Maximum Power Dissipation: 800mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 23nC @ 4.5V Max Input Capacitance: 1600pF @ 10V Maximum Rds On at Id,Vgs: 22 mOhm @ 4.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038367-FDR8305N Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-8 Maximum Power Dissipation: 800mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 23nC @ 4.5V Max Input Capacitance: 1600pF @ 10V Maximum Rds On at Id,Vgs: 22 mOhm @ 4.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8305N - 1038367-FDR8305N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8305N
1038367-FDR8305N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8305N 1038367-FDR8305N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038367-FDR8305N Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-8 Maximum Power Dissipation: 800mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 23nC @ 4.5V Max Input Capacitance: 1600pF @ 10V Maximum Rds On at Id,Vgs: 22 mOhm @ 4.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038367-FDR8305N
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-8
Maximum Power Dissipation: 800mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 23nC @ 4.5V
Max Input Capacitance: 1600pF @ 10V
Maximum Rds On at Id,Vgs: 22 mOhm @ 4.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - FDR8305N-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDR8305N-ND
FET, MOSFET Arrays FDR8305N-ND
Mosfet Array 2 N-Channel (Dual) 20V 4.5A 800mW Surface Mount SuperSOT™-8

Mosfet Array 2 N-Channel (Dual) 20V 4.5A 800mW Surface Mount SuperSOT™-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDR8305N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDR8305N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDR8305N
MOSFET 2N-CH 20V 4.5A SUPERSOT-8

MOSFET 2N-CH 20V 4.5A SUPERSOT-8

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1038367-FDR8305N FDR8305N-ND FDR8305N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR8305N FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
V(BR)DSS 20 volts
PD 800 milliwatts
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