onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR6580 FDR6580

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067065-FDR6580
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-8
Dimension: 8-SMD, Gull Wing
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 11.2A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 48nC @ 4.5V
Max Input Capacitance: 3829pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 9 mOhm @ 11.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

MOSFET N-CH 20V 11.2A SSOT-8 Product overview: FDR6580 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 11.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 11.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDR6580 can be used for catalog matching and distributor lookup.

N-Channel 20V 11.2A (Ta) 1.8W (Ta) Surface Mount SuperSOT™-8