onsemi Single FETs, MOSFETs FDPF680N10T

Description
N-Channel 100V 12A (Tc) 24W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet
Description
N-Channel 100V 12A (Tc) 24W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - FDPF680N10T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDPF680N10T-ND
Single FETs, MOSFETs FDPF680N10T-ND
N-Channel 100V 12A (Tc) 24W (Tc) Through Hole TO-220F-3

N-Channel 100V 12A (Tc) 24W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF680N10T - 040271-FDPF680N10T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF680N10T
040271-FDPF680N10T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF680N10T 040271-FDPF680N10T
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040271-FDPF680N10T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 24W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 1000pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 68 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040271-FDPF680N10T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 24W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 1000pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 68 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDPF680N10T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDPF680N10T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDPF680N10T
MOSFET N-CH 100V 12A TO220F

MOSFET N-CH 100V 12A TO220F

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDPF680N10T-ND 040271-FDPF680N10T FDPF680N10T
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF680N10T Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220F TO-220; TO-220-3 Full Pack
V(BR)DSS 100 volts
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