Manufacturer: ON Semiconductor
Win Source Part Number: 809411-FDPF39N20TLDT
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200V
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 37W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 83 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 800
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 66mOhm at 19.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 49nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2130pF at 25V
Current - Continuous Drain (Id) at 25°C: 39A (Tc)
Vgs(th) (Maximum) at Id: 5V at 250μA
Maximum Vgs: ±30V
N-Channel 200V 39A (Tc) 37W (Tc) Through Hole TO-220F
MOSFET N-CH 200V 39A TO220F
MOSFET, N-CH, 200V, 39A, TO-220F; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:39A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 809411-FDPF39N20TLDTU | FDPF39N20TLDTU-ND | FDPF39N20TLDTU | FDPF39N20TLDTU | 01AC8586 |
| Product Name | FETs - Single - FDPF39N20TLDTU | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 200V, 39A, To-220F; Channel Type Onsemi |
| Polarity | N-Channel | N-Channel | |||
| PD | 37000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |
