onsemi Single FETs, MOSFETs FDPF3860T

Description
N-Channel 100V 20A (Tc) 33.8W (Tc) Through Hole TO-220F-3
  • Single FETs, MOSFETs - FDPF3860T-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF3860T - 016126-FDPF3860T - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDPF3860T - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet Transistor, N Channel, 20 A, 100 V, 0.0291 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi - 95W3169 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N Channel, 100V, 0.0291Ohm, 20A, To-220F-3; Transistor Polarity Onsemi - 08N9292 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDPF3860T - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 49254243 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
N-Channel 100V 20A (Tc) 33.8W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDPF3860T-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDPF3860T-ND
Single FETs, MOSFETs FDPF3860T-ND
N-Channel 100V 20A (Tc) 33.8W (Tc) Through Hole TO-220F-3

N-Channel 100V 20A (Tc) 33.8W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF3860T - 016126-FDPF3860T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF3860T
016126-FDPF3860T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF3860T 016126-FDPF3860T
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016126-FDPF3860T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33.8W (Tc) Family Name: FDPF3860T Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 38.2 mOhm @ 5.9A, 10V Alternative Parts (Cross-Reference): STF30N10F7; STF25N10F7; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China, United States of America Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Consumer Electronics

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016126-FDPF3860T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33.8W (Tc)
Family Name: FDPF3860T
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 38.2 mOhm @ 5.9A, 10V
Alternative Parts (Cross-Reference): STF30N10F7; STF25N10F7;
Introduction Date: September 14, 2004
ECCN: EAR99
Country of Origin: China, United States of America
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Consumer Electronics

Buy Now Datasheet
Single FETs, MOSFETs - FDPF3860T - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDPF3860T
Single FETs, MOSFETs FDPF3860T
MOSFET N-CH 100V 20A TO220F

MOSFET N-CH 100V 20A TO220F

Supplier's Site
ERSAELECTRONICS PTE. LTD.
Singapore
100V 20A 38.2mOhm MOSFET Transistor
2088-FDPF3860T
100V 20A 38.2mOhm MOSFET Transistor 2088-FDPF3860T
MOSFETs 100V 20A 38.2mOhm Product overview: FDPF3860T from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 20A, 38.2mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 20A, 38.2mOhm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDPF3860T can be used for catalog matching and distributor lookup.

MOSFETs 100V 20A 38.2mOhm Product overview: FDPF3860T from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 20A, 38.2mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 20A, 38.2mOhm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDPF3860T can be used for catalog matching and distributor lookup.

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
FDPF3860T
Triode/MOS Tube/Transistor >> MOSFETs FDPF3860T
100V 20A 38.2mΩ@10V,5.9A 33.8W 4.5V@250uA N Channel TO-220F-3 MOSFETs ROHS

100V 20A 38.2mΩ@10V,5.9A 33.8W 4.5V@250uA N Channel TO-220F-3 MOSFETs ROHS

Supplier's Site Datasheet
Mosfet Transistor, N Channel, 20 A, 100 V, 0.0291 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi - 95W3169 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 20 A, 100 V, 0.0291 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi
95W3169
Mosfet Transistor, N Channel, 20 A, 100 V, 0.0291 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi 95W3169
MOSFET Transistor, N Channel, 20 A, 100 V, 0.0291 ohm, 10 V, 2.5 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 20 A, 100 V, 0.0291 ohm, 10 V, 2.5 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Channel, 100V, 0.0291Ohm, 20A, To-220F-3; Transistor Polarity Onsemi - 08N9292 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 100V, 0.0291Ohm, 20A, To-220F-3; Transistor Polarity Onsemi
08N9292
Mosfet, N Channel, 100V, 0.0291Ohm, 20A, To-220F-3; Transistor Polarity Onsemi 08N9292
MOSFET, N CHANNEL, 100V, 0.0291OHM, 20A, TO-220F-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:20A; On Resistance Rds(on):0.0291ohm; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes

MOSFET, N CHANNEL, 100V, 0.0291OHM, 20A, TO-220F-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:20A; On Resistance Rds(on):0.0291ohm; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDPF3860T
MOSFET FDPF3860T
MOSFET 100V 20A 38.2mOhm

MOSFET 100V 20A 38.2mOhm

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDPF3860T - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDPF3860T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDPF3860T
MOSFET N-CH 100V 20A TO220F

MOSFET N-CH 100V 20A TO220F

Supplier's Site
Transistor - 49254243 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
49254243
Transistor 49254243
POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 100V, 0.0382OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 100V, 0.0382OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. LCSC Electronics Technology (HK) Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number FDPF3860T-ND 016126-FDPF3860T FDPF3860T 2088-FDPF3860T FDPF3860T 95W3169 08N9292 FDPF3860T FDPF3860T 49254243
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF3860T Single FETs, MOSFETs 100V 20A 38.2mOhm MOSFET Transistor Triode/MOS Tube/Transistor >> MOSFETs Mosfet Transistor, N Channel, 20 A, 100 V, 0.0291 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi Mosfet, N Channel, 100V, 0.0291Ohm, 20A, To-220F-3; Transistor Polarity Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220F TO-220; TO-220-3 Full Pack Tube TO-220 TO-3 TO-3; TO-220 TO-220; TO-220-3 Full Pack
V(BR)DSS 100 volts 100 volts 100 volts
PD 33800 milliwatts 33800 milliwatts 33.8 milliwatts 33800 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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