onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF3860T FDPF3860T

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016126-FDPF3860T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33.8W (Tc) Family Name: FDPF3860T Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 38.2 mOhm @ 5.9A, 10V Alternative Parts (Cross-Reference): STF30N10F7; STF25N10F7; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China, United States of America Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Consumer Electronics
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF3860T - 016126-FDPF3860T - Win Source Electronics
    Win Source Electronics
  • Transistor - 49254243 - Radwell International
    Radwell International
  • Single FETs, MOSFETs - FDPF3860T - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FDPF3860T-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDPF3860T - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet Transistor, N Channel, 20 A, 100 V, 0.0291 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi - 95W3169 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N Channel, 100V, 0.0291Ohm, 20A, To-220F-3; Transistor Polarity Onsemi - 08N9292 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016126-FDPF3860T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33.8W (Tc) Family Name: FDPF3860T Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 38.2 mOhm @ 5.9A, 10V Alternative Parts (Cross-Reference): STF30N10F7; STF25N10F7; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China, United States of America Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Consumer Electronics
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF3860T - 016126-FDPF3860T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF3860T
016126-FDPF3860T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF3860T 016126-FDPF3860T
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016126-FDPF3860T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33.8W (Tc) Family Name: FDPF3860T Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 38.2 mOhm @ 5.9A, 10V Alternative Parts (Cross-Reference): STF30N10F7; STF25N10F7; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China, United States of America Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Consumer Electronics

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016126-FDPF3860T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33.8W (Tc)
Family Name: FDPF3860T
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 38.2 mOhm @ 5.9A, 10V
Alternative Parts (Cross-Reference): STF30N10F7; STF25N10F7;
Introduction Date: September 14, 2004
ECCN: EAR99
Country of Origin: China, United States of America
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Consumer Electronics

Buy Now Datasheet
Transistor - 49254243 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
49254243
Transistor 49254243
POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 100V, 0.0382OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 100V, 0.0382OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - FDPF3860T - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDPF3860T
Single FETs, MOSFETs FDPF3860T
MOSFET N-CH 100V 20A TO220F

MOSFET N-CH 100V 20A TO220F

Supplier's Site
Single FETs, MOSFETs - FDPF3860T-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDPF3860T-ND
Single FETs, MOSFETs FDPF3860T-ND
N-Channel 100V 20A (Tc) 33.8W (Tc) Through Hole TO-220F-3

N-Channel 100V 20A (Tc) 33.8W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDPF3860T - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDPF3860T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDPF3860T
MOSFET N-CH 100V 20A TO220F

MOSFET N-CH 100V 20A TO220F

Supplier's Site
Mosfet Transistor, N Channel, 20 A, 100 V, 0.0291 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi - 95W3169 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 20 A, 100 V, 0.0291 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi
95W3169
Mosfet Transistor, N Channel, 20 A, 100 V, 0.0291 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi 95W3169
MOSFET Transistor, N Channel, 20 A, 100 V, 0.0291 ohm, 10 V, 2.5 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 20 A, 100 V, 0.0291 ohm, 10 V, 2.5 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Channel, 100V, 0.0291Ohm, 20A, To-220F-3; Transistor Polarity Onsemi - 08N9292 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 100V, 0.0291Ohm, 20A, To-220F-3; Transistor Polarity Onsemi
08N9292
Mosfet, N Channel, 100V, 0.0291Ohm, 20A, To-220F-3; Transistor Polarity Onsemi 08N9292
MOSFET, N CHANNEL, 100V, 0.0291OHM, 20A, TO-220F-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:20A; On Resistance Rds(on):0.0291ohm; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes

MOSFET, N CHANNEL, 100V, 0.0291OHM, 20A, TO-220F-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:20A; On Resistance Rds(on):0.0291ohm; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
FDPF3860T
Triode/MOS Tube/Transistor >> MOSFETs FDPF3860T
100V 20A 38.2mΩ@10V,5.9A 33.8W 4.5V@250uA N Channel TO-220F-3 MOSFETs ROHS

100V 20A 38.2mΩ@10V,5.9A 33.8W 4.5V@250uA N Channel TO-220F-3 MOSFETs ROHS

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDPF3860T
MOSFET FDPF3860T
MOSFET 100V 20A 38.2mOhm

MOSFET 100V 20A 38.2mOhm

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Radwell International ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016126-FDPF3860T 49254243 FDPF3860T FDPF3860T-ND FDPF3860T 95W3169 08N9292 FDPF3860T FDPF3860T
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF3860T Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 20 A, 100 V, 0.0291 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi Mosfet, N Channel, 100V, 0.0291Ohm, 20A, To-220F-3; Transistor Polarity Onsemi Triode/MOS Tube/Transistor >> MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts 100 volts
PD 33800 milliwatts 33800 milliwatts 33800 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220F TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-3 TO-3; TO-220 TO-220
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