Manufacturer: ON Semiconductor
Win Source Part Number: 812329-FDPF2D3N10C
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 45W (Tc)
Popularity: Low
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
Rds On (Maximum) at Id, Vgs: 2.3mOhm at 100A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 152nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 11180pF at 50V
Current - Continuous Drain (Id) at 25°C: 222A (Tc)
Vgs(th) (Maximum) at Id: 4V at 700μA
Maximum Vgs: ±20V
MOSFET N-CH 100V 222A TO220F
N-Channel 100V 222A (Tc) 45W (Tc) Through Hole TO-220F
MOSFETs PTNG N-CH 100V/120V Product overview: FDPF2D3N10C from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 120V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 120V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDPF2D3N10C can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 222A TO220F
MOSFET N-CH 100V 222A TO220F
MOSFET, N-CH, 100V, 222A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:222A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 812329-FDPF2D3N10C | FDPF2D3N10C | FDPF2D3N10C-ND | 2088-FDPF2D3N10C | 1811861 | 1811911P | FDPF2D3N10C | 598-FDPF2D3N10C | FDPF2D3N10C | 22AC8208 |
| Product Name | FETs - Single - FDPF2D3N10C | Single FETs, MOSFETs | Single FETs, MOSFETs | 100V 120V MOSFET Transistor | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 100V 222A TO220F | MOSFET | Mosfet, N-Ch, 100V, 222A, To-220F; Transistor Polarity Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||||
| PD | 45000 milliwatts | 45000 milliwatts | 45 milliwatts | 45000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||||
| Package Type | TO-220; SOT3 | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | Tube | TO-220; To-220f | TO-220; TO-220 | TO-220; TO-220-3 Full Pack | TO-3; TO-220 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
