onsemi MOSFETs FDPF2D3N10C

Description
PTNG 100/20V IN TO220F 3L
Request a Quote Datasheet
Description
PTNG 100/20V IN TO220F 3L
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 1811861 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1811861
MOSFETs 1811861
PTNG 100/20V IN TO220F 3L

PTNG 100/20V IN TO220F 3L

Supplier's Site
MOSFETs - 1811911 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1811911
MOSFETs 1811911
PTNG 100/20V IN TO220F 3L

PTNG 100/20V IN TO220F 3L

Supplier's Site
MOSFETs - 1811911P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1811911P
MOSFETs 1811911P
PTNG 100/20V IN TO220F 3L

PTNG 100/20V IN TO220F 3L

Supplier's Site
FETs - Single - FDPF2D3N10C - 812329-FDPF2D3N10C - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FDPF2D3N10C
812329-FDPF2D3N10C
FETs - Single - FDPF2D3N10C 812329-FDPF2D3N10C
Manufacturer: ON Semiconductor Win Source Part Number: 812329-FDPF2D3N10C Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100V Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 45W (Tc) Popularity: Low Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 Rds On (Maximum) at Id, Vgs: 2.3mOhm at 100A, 10V Gate Charge (Qg) (Maximum) at Vgs: 152nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 11180pF at 50V Current - Continuous Drain (Id) at 25°C: 222A (Tc) Vgs(th) (Maximum) at Id: 4V at 700μA Maximum Vgs: ±20V

Manufacturer: ON Semiconductor
Win Source Part Number: 812329-FDPF2D3N10C
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 45W (Tc)
Popularity: Low
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
Rds On (Maximum) at Id, Vgs: 2.3mOhm at 100A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 152nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 11180pF at 50V
Current - Continuous Drain (Id) at 25°C: 222A (Tc)
Vgs(th) (Maximum) at Id: 4V at 700μA
Maximum Vgs: ±20V

Buy Now
Single FETs, MOSFETs - FDPF2D3N10C-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDPF2D3N10C-ND
Single FETs, MOSFETs FDPF2D3N10C-ND
N-Channel 100V 222A (Tc) 45W (Tc) Through Hole TO-220F

N-Channel 100V 222A (Tc) 45W (Tc) Through Hole TO-220F

Buy Now Datasheet
Single FETs, MOSFETs - FDPF2D3N10C - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDPF2D3N10C
Single FETs, MOSFETs FDPF2D3N10C
MOSFET N-CH 100V 222A TO220F

MOSFET N-CH 100V 222A TO220F

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDPF2D3N10C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDPF2D3N10C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDPF2D3N10C
MOSFET N-CH 100V 222A TO220F

MOSFET N-CH 100V 222A TO220F

Supplier's Site
MOSFET N-CH 100V 222A TO220F - 598-FDPF2D3N10C - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 222A TO220F
598-FDPF2D3N10C
MOSFET N-CH 100V 222A TO220F 598-FDPF2D3N10C
MOSFET N-CH 100V 222A TO220F

MOSFET N-CH 100V 222A TO220F

Supplier's Site
Mosfet, N-Ch, 100V, 222A, To-220F; Transistor Polarity Onsemi - 22AC8208 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 222A, To-220F; Transistor Polarity Onsemi
22AC8208
Mosfet, N-Ch, 100V, 222A, To-220F; Transistor Polarity Onsemi 22AC8208
MOSFET, N-CH, 100V, 222A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:222A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 100V, 222A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:222A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET PTNG N-CH 100V/120V

MOSFET PTNG N-CH 100V/120V

Buy Now Datasheet

Technical Specifications

  RS Components, Ltd. RS Components, Ltd. Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1811861 1811911P 812329-FDPF2D3N10C FDPF2D3N10C-ND FDPF2D3N10C FDPF2D3N10C 598-FDPF2D3N10C 22AC8208 FDPF2D3N10C
Product Name MOSFETs MOSFETs FETs - Single - FDPF2D3N10C Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 100V 222A TO220F Mosfet, N-Ch, 100V, 222A, To-220F; Transistor Polarity Onsemi MOSFET
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement
Package Type TO-220; To-220f TO-220; TO-220 TO-220; SOT3 TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-3; TO-220
Number of units in IC 1
PD 45000 milliwatts 45000 milliwatts 45000 milliwatts
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