onsemi Single FETs, MOSFETs FDPF20N50T

Description
N-Channel 500V 20A (Tc) 38.5W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet
Description
N-Channel 500V 20A (Tc) 38.5W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDPF20N50T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDPF20N50T-ND
Single FETs, MOSFETs FDPF20N50T-ND
N-Channel 500V 20A (Tc) 38.5W (Tc) Through Hole TO-220F-3

N-Channel 500V 20A (Tc) 38.5W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF20N50T - 016125-FDPF20N50T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF20N50T
016125-FDPF20N50T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF20N50T 016125-FDPF20N50T
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016125-FDPF20N50T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 59.5nC @ 10V Max Input Capacitance: 3120pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 230 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016125-FDPF20N50T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 59.5nC @ 10V
Max Input Capacitance: 3120pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 230 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDPF20N50T - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDPF20N50T
Single FETs, MOSFETs FDPF20N50T
MOSFET N-CH 500V 20A TO220F

MOSFET N-CH 500V 20A TO220F

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 500V 20A NCH MOSFET

MOSFET 500V 20A NCH MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDPF20N50T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDPF20N50T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDPF20N50T
MOSFET N-CH 500V 20A TO220F

MOSFET N-CH 500V 20A TO220F

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDPF20N50T-ND 016125-FDPF20N50T FDPF20N50T FDPF20N50T FDPF20N50T
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF20N50T Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220F TO-220; TO-220-3 Full Pack 59.5 nC @ 10 V
V(BR)DSS 500 volts 500 volts
PD 38500 milliwatts 38500 milliwatts
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