onsemi Single FETs, MOSFETs FDPF20N50FT

Description
MOSFET N-CH 500V 20A TO220F
Request a Quote Datasheet
Description
MOSFET N-CH 500V 20A TO220F
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDPF20N50FT - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDPF20N50FT
Single FETs, MOSFETs FDPF20N50FT
MOSFET N-CH 500V 20A TO220F

MOSFET N-CH 500V 20A TO220F

Supplier's Site Datasheet
Single FETs, MOSFETs - FDPF20N50FT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDPF20N50FT-ND
Single FETs, MOSFETs FDPF20N50FT-ND
N-Channel 500V 20A (Tc) 38.5W (Tc) Through Hole TO-220F-3

N-Channel 500V 20A (Tc) 38.5W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF20N50FT - 067051-FDPF20N50FT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF20N50FT
067051-FDPF20N50FT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF20N50FT 067051-FDPF20N50FT
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067051-FDPF20N50FT Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 3390pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 260 mOhm @ 10A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067051-FDPF20N50FT
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 3390pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 260 mOhm @ 10A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
MOSFET N-CH 500V 20A TO-220F - 598-FDPF20N50FT - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 500V 20A TO-220F
598-FDPF20N50FT
MOSFET N-CH 500V 20A TO-220F 598-FDPF20N50FT
MOSFET N-CH 500V 20A TO-220F

MOSFET N-CH 500V 20A TO-220F

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDPF20N50FT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDPF20N50FT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDPF20N50FT
MOSFET N-CH 500V 20A TO220F

MOSFET N-CH 500V 20A TO220F

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 500V N-Channel

MOSFET 500V N-Channel

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDPF20N50FT FDPF20N50FT-ND 067051-FDPF20N50FT 598-FDPF20N50FT FDPF20N50FT FDPF20N50FT
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF20N50FT MOSFET N-CH 500V 20A TO-220F Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 500 volts 500 volts 500 volts
IDSS 20000 milliamps
PD 38500 milliwatts 38500 milliwatts 38500 milliwatts
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