onsemi Single FETs, MOSFETs FDPF16N50T

Description
MOSFET N-CH 500V 16A TO220F
Request a Quote Datasheet
Description
MOSFET N-CH 500V 16A TO220F
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDPF16N50T - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDPF16N50T
Single FETs, MOSFETs FDPF16N50T
MOSFET N-CH 500V 16A TO220F

MOSFET N-CH 500V 16A TO220F

Supplier's Site Datasheet
Single FETs, MOSFETs - FDPF16N50T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDPF16N50T-ND
Single FETs, MOSFETs FDPF16N50T-ND
N-Channel 500V 16A (Tc) 38.5W (Tc) Through Hole TO-220F-3

N-Channel 500V 16A (Tc) 38.5W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF16N50T - 016124-FDPF16N50T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF16N50T
016124-FDPF16N50T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF16N50T 016124-FDPF16N50T
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016124-FDPF16N50T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1945pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 380 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016124-FDPF16N50T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1945pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDPF16N50T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDPF16N50T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDPF16N50T
MOSFET N-CH 500V 16A TO220F

MOSFET N-CH 500V 16A TO220F

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 500V 16A NCH MOSFET

MOSFET 500V 16A NCH MOSFET

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDPF16N50T FDPF16N50T-ND 016124-FDPF16N50T FDPF16N50T FDPF16N50T
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF16N50T Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
IDSS 16000 milliamps
Unlock Full Specs
to access all available technical data