onsemi Single FETs, MOSFETs FDPF10N50FT

Description
MOSFET N-CH 500V 9A TO220F
Request a Quote Datasheet
Description
MOSFET N-CH 500V 9A TO220F
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDPF10N50FT - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDPF10N50FT
Single FETs, MOSFETs FDPF10N50FT
MOSFET N-CH 500V 9A TO220F

MOSFET N-CH 500V 9A TO220F

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF10N50FT - 067040-FDPF10N50FT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF10N50FT
067040-FDPF10N50FT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF10N50FT 067040-FDPF10N50FT
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067040-FDPF10N50FT Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 1170pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 850 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067040-FDPF10N50FT
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F-3
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 1170pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 850 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDPF10N50FT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDPF10N50FT-ND
Single FETs, MOSFETs FDPF10N50FT-ND
N-Channel 500V 9A (Tc) 42W (Tc) Through Hole TO-220F-3

N-Channel 500V 9A (Tc) 42W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDPF10N50FT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDPF10N50FT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDPF10N50FT
MOSFET N-CH 500V 9A TO220F

MOSFET N-CH 500V 9A TO220F

Supplier's Site
Transistor - 184370354 - Radwell International
Willingboro, NJ, United States
Transistor
184370354
Transistor 184370354
POWER FIELD-EFFECT TRANSISTOR, 9A I(D), 500V, 0.85OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220F. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 9A I(D), 500V, 0.85OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220F. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
MOSFET UniFET 500V 10A

MOSFET UniFET 500V 10A

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Radwell International VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDPF10N50FT 067040-FDPF10N50FT FDPF10N50FT-ND FDPF10N50FT 184370354 FDPF10N50FT
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF10N50FT Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
IDSS 9000 milliamps
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