MOSFET 2N-CH 25V 13A/26A PWR CLP
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 13A, 26A 800mW, 900mW Surface Mount Powerclip-33
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 13A, 26A 800mW, 900mW Surface Mount Powerclip-33
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 13A, 26A 800mW, 900mW Surface Mount Powerclip-33
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 13A, 26A 800mW, 900mW Surface Mount Powerclip-33
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 13A, 26A 800mW, 900mW Surface Mount Powerclip-33
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 13A, 26A 800mW, 900mW Surface Mount Powerclip-33
Manufacturer: ON Semiconductor
Win Source Part Number: 804310-FDPC8012S
Packaging: Reel
Mounting Style: SMD
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Power - Max: 800mW, 900mW
Supplier Device Package: Powerclip-33
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerWDFN
Popularity: Medium
Fake Threat In the Open Market: 78 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 7mOhm at 12A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 8nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 1075pF at 13V
Current - Continuous Drain (Id) at 25°C: 13A, 26A
Vgs(th) (Maximum) at Id: 2.2V at 250μA
MOSFET 25V Asymmetric Dual N-Channel Pwr Trench
MOSFET 2N-CH 25V 13A PWRCLIP-33
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDPC8012S | FDPC8012SCT-ND | 804310-FDPC8012S | FDPC8012S | FDPC8012S |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | FETs - Arrays - FDPC8012S | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) Asymmetrical | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 25 volts | ||||
| IDSS | 13000 milliamps |