onsemi Single FETs, MOSFETs FDP8N50NZ

Description
N-Channel 500V 8A (Tc) 130W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 500V 8A (Tc) 130W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDP8N50NZ-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP8N50NZ-ND
Single FETs, MOSFETs FDP8N50NZ-ND
N-Channel 500V 8A (Tc) 130W (Tc) Through Hole TO-220-3

N-Channel 500V 8A (Tc) 130W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore, Singapore
500V MOSFET Transistor
2088-FDP8N50NZ
500V MOSFET Transistor 2088-FDP8N50NZ
MOSFETs UNIFET2 500V Product overview: FDP8N50NZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP8N50NZ can be used for catalog matching and distributor lookup.

MOSFETs UNIFET2 500V Product overview: FDP8N50NZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP8N50NZ can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8N50NZ - 204122-FDP8N50NZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8N50NZ
204122-FDP8N50NZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8N50NZ 204122-FDP8N50NZ
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204122-FDP8N50NZ Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 130W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 735pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 850 mOhm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204122-FDP8N50NZ
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 735pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 850 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP8N50NZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP8N50NZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP8N50NZ
MOSFET N-CH 500V 8A TO220-3

MOSFET N-CH 500V 8A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET UNIFET2 500V

MOSFET UNIFET2 500V

Buy Now Datasheet
Mosfet, N-Ch, 500V, 8A, 150Deg C, 130W Rohs Compliant Onsemi - 54AH8672 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 8A, 150Deg C, 130W Rohs Compliant Onsemi
54AH8672
Mosfet, N-Ch, 500V, 8A, 150Deg C, 130W Rohs Compliant Onsemi 54AH8672
MOSFET, N-CH, 500V, 8A, 150DEG C, 130W ROHS COMPLIANT: YES

MOSFET, N-CH, 500V, 8A, 150DEG C, 130W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Single FETs, MOSFETs - FDP8N50NZ - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP8N50NZ
Single FETs, MOSFETs FDP8N50NZ
MOSFET N-CH 500V 8A TO220-3

MOSFET N-CH 500V 8A TO220-3

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDP8N50NZ-ND 2088-FDP8N50NZ 204122-FDP8N50NZ FDP8N50NZ FDP8N50NZ 54AH8672 FDP8N50NZ
Product Name Single FETs, MOSFETs 500V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8N50NZ Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 500V, 8A, 150Deg C, 130W Rohs Compliant Onsemi Single FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Tube TO-220; SOT3; TO-220-3 TO-220; TO-220-3 TO-3 TO-220; TO-220-3
MOSFET Operating Mode Enhancement
Transconductance 0.0063 kS
PD 139 milliwatts 130000 milliwatts 130000 milliwatts
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