POWER FIELD-EFFECT TRANSISTOR, 1 Product overview: FDP8880 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP8880 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204120-FDP8880
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 55W (Tc)
Family Name: FDP8880
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta), 54A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1240pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.6 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): 2SK3081-E; IPP22N03S4L15AKSA1; GFP60N03;
Introduction Date: February 07, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MOSFET N-CH 30V 11A/54A TO220-3
N-Channel 30V 11A (Ta), 54A (Tc) 55W (Tc) Through Hole TO-220-3
MOSFET 30V N-Channel PowerTrench MOSFET
MOSFET N-CH 30V 11A/54A TO220-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-FDP8880 | 204120-FDP8880 | FDP8880 | FDP8880FS-ND | FDP8880 | FDP8880 |
| Product Name | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8880 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 55000 milliwatts | 55000 milliwatts | 55000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | Bulk | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | |
| Packing Method | Bulk | Rail; Tube; Tube/Rail | Tube; Tube |
