onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8878 FDP8878

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067037-FDP8878 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 1235pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067037-FDP8878 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 1235pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8878 - 067037-FDP8878 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8878
067037-FDP8878
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8878 067037-FDP8878
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067037-FDP8878 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 1235pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067037-FDP8878
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 1235pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - FDP8878-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP8878-ND
Single FETs, MOSFETs FDP8878-ND
N-Channel 30V 40A (Tc) 40.5W (Tc) Through Hole TO-220-3

N-Channel 30V 40A (Tc) 40.5W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP8878 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP8878
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP8878
MOSFET N-CH 30V 40A TO220-3

MOSFET N-CH 30V 40A TO220-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 067037-FDP8878 FDP8878-ND FDP8878
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8878 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 40500 milliwatts
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