onsemi Single FETs, MOSFETs FDP8870

MOSFET N-CH 30V 156A TO-220AB

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016120-FDP8870
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 19A (Ta), 156A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 132nC @ 10V
Max Input Capacitance: 5200pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.1 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial

N-Channel MOSFET 30V 156A 4.1mR TO-220AB Product overview: FDP8870 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 156A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 156A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP8870 can be used for catalog matching and distributor lookup.