Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038339-FDP8860
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 254W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 222nC @ 10V
Max Input Capacitance: 12240pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Quantity per package: 800
N-Channel 30V 80A (Tc) 254W (Tc) Through Hole TO-220-3
MOSFET 30V N-Channel PowerTrench MOSFET
MOSFET N-CH 30V 80A TO220-3
MOSFET 30V N-Channel PowerTrench MOSFET
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1038339-FDP8860 | FDP8860-ND | FDP8860 | FDP8860 | 598-FDP8860 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8860 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 30V N-Channel PowerTrench MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | |||
| PD | 254000 milliwatts | 254000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 |
