onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8442_F085 FDP8442_F085

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038335-FDP8442_F085 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 254W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 23A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 235nC @ 10V Max Input Capacitance: 12200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.1 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038335-FDP8442_F085 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 254W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 23A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 235nC @ 10V Max Input Capacitance: 12200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.1 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8442_F085 - 1038335-FDP8442_F085 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8442_F085
1038335-FDP8442_F085
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8442_F085 1038335-FDP8442_F085
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038335-FDP8442_F085 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 254W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 23A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 235nC @ 10V Max Input Capacitance: 12200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.1 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038335-FDP8442_F085
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 254W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 23A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 235nC @ 10V
Max Input Capacitance: 12200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.1 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1038335-FDP8442_F085
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8442_F085
Polarity N-Channel; N-Channel
V(BR)DSS 40 volts
PD 254000 milliwatts
Unlock Full Specs
to access all available technical data