onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP80N06 FDP80N06

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038333-FDP80N06 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 176W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 74nC @ 10V Max Input Capacitance: 3190pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP80N06 - 1038333-FDP80N06 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDP80N06-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP80N06 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 60V, 80A, 175Deg C, 176W Rohs Compliant Onsemi - 54AH8673 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038333-FDP80N06 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 176W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 74nC @ 10V Max Input Capacitance: 3190pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP80N06 - 1038333-FDP80N06 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP80N06
1038333-FDP80N06
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP80N06 1038333-FDP80N06
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038333-FDP80N06 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 176W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 74nC @ 10V Max Input Capacitance: 3190pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038333-FDP80N06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 176W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 74nC @ 10V
Max Input Capacitance: 3190pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 60V 80A TO-220 MOSFET Transistor
278-FDP80N06
N-Channel 60V 80A TO-220 MOSFET Transistor 278-FDP80N06
N-Channel MOSFET, 60V, 80A, 10mR, TO-220 Product overview: FDP80N06 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 80A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 80A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP80N06 can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 60V, 80A, 10mR, TO-220 Product overview: FDP80N06 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 80A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 80A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP80N06 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FDP80N06-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP80N06-ND
Single FETs, MOSFETs FDP80N06-ND
N-Channel 60V 80A (Tc) 176W (Tc) Through Hole TO-220-3

N-Channel 60V 80A (Tc) 176W (Tc) Through Hole TO-220-3

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDP80N06
MOSFET FDP80N06
MOSFET 60V N-Channel

MOSFET 60V N-Channel

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP80N06 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP80N06
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP80N06
MOSFET N-CH 60V 80A TO220-3

MOSFET N-CH 60V 80A TO220-3

Supplier's Site
Mosfet, N-Ch, 60V, 80A, 175Deg C, 176W Rohs Compliant Onsemi - 54AH8673 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 80A, 175Deg C, 176W Rohs Compliant Onsemi
54AH8673
Mosfet, N-Ch, 60V, 80A, 175Deg C, 176W Rohs Compliant Onsemi 54AH8673
MOSFET, N-CH, 60V, 80A, 175DEG C, 176W ROHS COMPLIANT: YES

MOSFET, N-CH, 60V, 80A, 175DEG C, 176W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1038333-FDP80N06 278-FDP80N06 FDP80N06-ND FDP80N06 FDP80N06 54AH8673
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP80N06 N-Channel 60V 80A TO-220 MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 60V, 80A, 175Deg C, 176W Rohs Compliant Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts
PD 176000 milliwatts 176000 milliwatts
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