Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038333-FDP80N06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 176W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 74nC @ 10V
Max Input Capacitance: 3190pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs
N-Channel 60V 80A (Tc) 176W (Tc) Through Hole TO-220-3
MOSFET N-CH 60V 80A TO220-3
MOSFET, N-CH, 60V, 80A, 175DEG C, 176W ROHS COMPLIANT: YES
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1038333-FDP80N06 | FDP80N06-ND | FDP80N06 | 54AH8673 | FDP80N06 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP80N06 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 80A, 175Deg C, 176W Rohs Compliant Onsemi | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 60 volts | ||||
| PD | 176000 milliwatts |
