onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8030L FDP8030L

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067034-FDP8030L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 187W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 170nC @ 5V Max Input Capacitance: 10500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited Quantity per package: 800
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8030L - 067034-FDP8030L - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDP8030LFS-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 488-FDP8030L-ND - DigiKey
    DigiKey
  • N Channel Mosfet, 30V, 80A, To-220; Channel Type Onsemi - 58K1469 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP8030L - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-Ch PowerTrench Logic Level - 598-FDP8030L - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067034-FDP8030L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 187W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 170nC @ 5V Max Input Capacitance: 10500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8030L - 067034-FDP8030L - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8030L
067034-FDP8030L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8030L 067034-FDP8030L
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067034-FDP8030L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 187W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 170nC @ 5V Max Input Capacitance: 10500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067034-FDP8030L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 187W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 80A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 170nC @ 5V
Max Input Capacitance: 10500pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDP8030LFS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP8030LFS-ND
Single FETs, MOSFETs FDP8030LFS-ND
N-Channel 30V 80A (Ta) 187W (Tc) Through Hole TO-220-3

N-Channel 30V 80A (Ta) 187W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Single FETs, MOSFETs - 488-FDP8030L-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-FDP8030L-ND
Single FETs, MOSFETs 488-FDP8030L-ND
N-Channel 30V 80A (Ta) 187W (Tc) Through Hole TO-220-3

N-Channel 30V 80A (Ta) 187W (Tc) Through Hole TO-220-3

Buy Now Datasheet
N Channel Mosfet, 30V, 80A, To-220; Channel Type Onsemi - 58K1469 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 80A, To-220; Channel Type Onsemi
58K1469
N Channel Mosfet, 30V, 80A, To-220; Channel Type Onsemi 58K1469
N CHANNEL MOSFET, 30V, 80A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 80A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP8030L - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP8030L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP8030L
MOSFET N-CH 30V 80A TO220-3

MOSFET N-CH 30V 80A TO220-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDP8030L
MOSFET FDP8030L
MOSFET N-Ch PowerTrench Logic Level

MOSFET N-Ch PowerTrench Logic Level

Buy Now Datasheet
MOSFET N-Ch PowerTrench Logic Level - 598-FDP8030L - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-Ch PowerTrench Logic Level
598-FDP8030L
MOSFET N-Ch PowerTrench Logic Level 598-FDP8030L
MOSFET N-Ch PowerTrench Logic Level

MOSFET N-Ch PowerTrench Logic Level

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 067034-FDP8030L FDP8030LFS-ND 58K1469 FDP8030L FDP8030L 598-FDP8030L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8030L Single FETs, MOSFETs N Channel Mosfet, 30V, 80A, To-220; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET N-Ch PowerTrench Logic Level
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 187000 milliwatts 187000 milliwatts
TJ -65 to 175 C (-85 to 347 F) -65 to 175 C (-85 to 347 F)
Package Type TO-220; SOT3; TO-220-3 TO-220; TO-220-3 TO-3; TO-220 TO-220; TO-220-3
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