onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8030L FDP8030L

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067034-FDP8030L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 187W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 170nC @ 5V Max Input Capacitance: 10500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited Quantity per package: 800
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8030L - 067034-FDP8030L - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDP8030LFS-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 488-FDP8030L-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP8030L - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 30V, 80A, To-220; Channel Type Onsemi - 58K1469 - Newark, An Avnet Company
    Newark, An Avnet Company
  • MOSFET N-Ch PowerTrench Logic Level - 598-FDP8030L - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067034-FDP8030L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 187W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 170nC @ 5V Max Input Capacitance: 10500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8030L - 067034-FDP8030L - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8030L
067034-FDP8030L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8030L 067034-FDP8030L
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067034-FDP8030L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 187W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 170nC @ 5V Max Input Capacitance: 10500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067034-FDP8030L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 187W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 80A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 170nC @ 5V
Max Input Capacitance: 10500pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDP8030LFS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP8030LFS-ND
Single FETs, MOSFETs FDP8030LFS-ND
N-Channel 30V 80A (Ta) 187W (Tc) Through Hole TO-220-3

N-Channel 30V 80A (Ta) 187W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Single FETs, MOSFETs - 488-FDP8030L-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-FDP8030L-ND
Single FETs, MOSFETs 488-FDP8030L-ND
N-Channel 30V 80A (Ta) 187W (Tc) Through Hole TO-220-3

N-Channel 30V 80A (Ta) 187W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP8030L - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP8030L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP8030L
MOSFET N-CH 30V 80A TO220-3

MOSFET N-CH 30V 80A TO220-3

Supplier's Site
N Channel Mosfet, 30V, 80A, To-220; Channel Type Onsemi - 58K1469 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 80A, To-220; Channel Type Onsemi
58K1469
N Channel Mosfet, 30V, 80A, To-220; Channel Type Onsemi 58K1469
N CHANNEL MOSFET, 30V, 80A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 80A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V; MSL:- RoHS Compliant: Yes

Supplier's Site
MOSFET N-Ch PowerTrench Logic Level - 598-FDP8030L - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-Ch PowerTrench Logic Level
598-FDP8030L
MOSFET N-Ch PowerTrench Logic Level 598-FDP8030L
MOSFET N-Ch PowerTrench Logic Level

MOSFET N-Ch PowerTrench Logic Level

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDP8030L
MOSFET FDP8030L
MOSFET N-Ch PowerTrench Logic Level

MOSFET N-Ch PowerTrench Logic Level

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 067034-FDP8030L FDP8030LFS-ND FDP8030L 58K1469 598-FDP8030L FDP8030L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP8030L Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 30V, 80A, To-220; Channel Type Onsemi MOSFET N-Ch PowerTrench Logic Level MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 187000 milliwatts 187000 milliwatts
TJ -65 to 175 C (-85 to 347 F) -65 to 175 C (-85 to 347 F)
Package Type TO-220; SOT3; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220
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