600V N-Channel Power MOSFET, 6.5A, 1.25 Ohm, TO-220 Product overview: FDP7N60NZ from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 6.5A, 1.25 Ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.5A, 1.25 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP7N60NZ can be used for catalog matching and distributor lookup.
N-Channel 600V 6.5A (Tc) 147W (Tc) Through Hole TO-220-3
POWER FIELD-EFFECT TRANSISTOR, 6
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038332-FDP7N60NZ
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 147W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 730pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.25 Ohm @ 3.25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
MOSFET N-CH 600V 6.5A TO220-3
MOSFET 600V N-Chan MOSFET UniFET-II
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FDP7N60NZ | FDP7N60NZOS-ND | FDP7N60NZ | 1038332-FDP7N60NZ | FDP7N60NZ | FDP7N60NZ |
| Product Name | N-Channel 600V 6.5A 1.25 Ohm MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP7N60NZ | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||
| PD | 147000 milliwatts | 147000 milliwatts | 147000 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 |