The FDP65N06 is an N-channel UniFET MOSFET designed for switching power converter applications such as PFC, TV power, and lamp ballasts. It is packaged in a TO-220 case and has a drain-source voltage rating of 60 V, a continuous drain current of 65 A at 25°C, and a maximum on-state resistance of 16 mΩ at 10 V gate-source voltage. The device supports a pulsed drain current of 260 A and has a single pulsed avalanche energy rating of 430 mJ. Thermal resistance from junction to case is 0.92 °C/W, and the operating temperature range is -55 to +150 °C. It meets RoHS compliance standards.
MOSFET, N TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:135W; RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 34M6123 |
| Product Name | Mosfet, N To-220; Transistor Polarity Onsemi |
| IDSS | 65000 milliamps |
