N CHANNEL MOSFET, 200V, 6.1A TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:6.1A; DRAIN SOURCE VOLTAGE VDS:200V; ON RESISTANCE RDS(ON):0.034OHM; RDS(ON) TEST VOLTAGE VGS:30V; THRESHOLD VOLTAGE VGS:5V; MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038329-FDP61N20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 417W (Tc)
Family Name: FDP61N20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 61A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 75nC @ 10V
Max Input Capacitance: 3380pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 41 mOhm @ 30.5A, 10V
Alternative Parts (Cross-Reference): IXTP48N20T; PSMN057-200P,127; PSMN057-200P; IRFB42N20D;
Introduction Date: September 15, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Lighting
Quantity per package: 800
MOSFET N-CH 200V 61A TO220-3
N-Channel 200V 61A (Tc) 417W (Tc) Through Hole TO-220-3
MOSFET N-Channel 200V 61A TO220AB
200V 61A 417W 41mΩ@10V,30.5A 5V@250uA N Channel TO-220 MOSFETs ROHS
MOSFET N-CH 200V 61A TO220-3
| Radwell International | Win Source Electronics | ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | RS Components, Ltd. | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 16115134 | 1038329-FDP61N20 | FDP61N20 | FDP61N20-ND | 6714859 | 6714859P | FDP61N20 | FDP61N20 | FDP61N20 |
| Product Name | Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP61N20 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | ||||||
| PD | 417000 milliwatts | 417000 milliwatts | 417000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; To-220ab | TO-220; TO-220 | TO-220 | TO-220; TO-220-3 |
