onsemi Transistor FDP61N20

Description
N CHANNEL MOSFET, 200V, 6.1A TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:6.1A; DRAIN SOURCE VOLTAGE VDS:200V; ON RESISTANCE RDS(ON):0.034OHM; RDS(ON) TEST VOLTAGE VGS:30V; THRESHOLD VOLTAGE VGS:5V; MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
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Description
N CHANNEL MOSFET, 200V, 6.1A TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:6.1A; DRAIN SOURCE VOLTAGE VDS:200V; ON RESISTANCE RDS(ON):0.034OHM; RDS(ON) TEST VOLTAGE VGS:30V; THRESHOLD VOLTAGE VGS:5V; MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
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Suppliers

Company
Product
Description
Supplier Links
Transistor - 16115134 - Radwell International
Willingboro, NJ, United States
Transistor
16115134
Transistor 16115134
N CHANNEL MOSFET, 200V, 6.1A TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:6.1A; DRAIN SOURCE VOLTAGE VDS:200V; ON RESISTANCE RDS(ON):0.034OHM; RDS(ON) TEST VOLTAGE VGS:30V; THRESHOLD VOLTAGE VGS:5V; MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 200V, 6.1A TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:6.1A; DRAIN SOURCE VOLTAGE VDS:200V; ON RESISTANCE RDS(ON):0.034OHM; RDS(ON) TEST VOLTAGE VGS:30V; THRESHOLD VOLTAGE VGS:5V; MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP61N20 - 1038329-FDP61N20 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP61N20
1038329-FDP61N20
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP61N20 1038329-FDP61N20
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038329-FDP61N20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 417W (Tc) Family Name: FDP61N20 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 61A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 3380pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 41 mOhm @ 30.5A, 10V Alternative Parts (Cross-Reference): IXTP48N20T; PSMN057-200P,127; PSMN057-200P; IRFB42N20D; Introduction Date: September 15, 2005 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Lighting Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038329-FDP61N20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 417W (Tc)
Family Name: FDP61N20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 61A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 75nC @ 10V
Max Input Capacitance: 3380pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 41 mOhm @ 30.5A, 10V
Alternative Parts (Cross-Reference): IXTP48N20T; PSMN057-200P,127; PSMN057-200P; IRFB42N20D;
Introduction Date: September 15, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Lighting
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDP61N20 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP61N20
Single FETs, MOSFETs FDP61N20
MOSFET N-CH 200V 61A TO220-3

MOSFET N-CH 200V 61A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FDP61N20-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP61N20-ND
Single FETs, MOSFETs FDP61N20-ND
N-Channel 200V 61A (Tc) 417W (Tc) Through Hole TO-220-3

N-Channel 200V 61A (Tc) 417W (Tc) Through Hole TO-220-3

Buy Now Datasheet
MOSFETs - 6714859 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6714859
MOSFETs 6714859
MOSFET N-Channel 200V 61A TO220AB

MOSFET N-Channel 200V 61A TO220AB

Supplier's Site
MOSFETs - 6714859P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6714859P
MOSFETs 6714859P
MOSFET N-Channel 200V 61A TO220AB

MOSFET N-Channel 200V 61A TO220AB

Supplier's Site
MOSFETs - 1455356 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1455356
MOSFETs 1455356
MOSFET N-Channel 200V 61A TO220AB

MOSFET N-Channel 200V 61A TO220AB

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
FDP61N20
Triode/MOS Tube/Transistor >> MOSFETs FDP61N20
200V 61A 417W 41mΩ@10V,30.5A 5V@250uA N Channel TO-220 MOSFETs ROHS

200V 61A 417W 41mΩ@10V,30.5A 5V@250uA N Channel TO-220 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP61N20 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP61N20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP61N20
MOSFET N-CH 200V 61A TO220-3

MOSFET N-CH 200V 61A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDP61N20
MOSFET FDP61N20
MOSFET 200V N-Channel MOSFET

MOSFET 200V N-Channel MOSFET

Buy Now Datasheet

Technical Specifications

  Radwell International Win Source Electronics ODG (Origin Data Global) DigiKey RS Components, Ltd. RS Components, Ltd. LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 16115134 1038329-FDP61N20 FDP61N20 FDP61N20-ND 6714859 6714859P FDP61N20 FDP61N20 FDP61N20
Product Name Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP61N20 Single FETs, MOSFETs Single FETs, MOSFETs MOSFETs MOSFETs Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 200 volts 200 volts 200 volts
PD 417000 milliwatts 417000 milliwatts 417000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3 TO-220; To-220ab TO-220; TO-220 TO-220 TO-220; TO-220-3
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