onsemi Single FETs, MOSFETs FDP5690

Description
N-Channel 60V 32A (Tc) 58W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 60V 32A (Tc) 58W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDP5690-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP5690-ND
Single FETs, MOSFETs FDP5690-ND
N-Channel 60V 32A (Tc) 58W (Tc) Through Hole TO-220-3

N-Channel 60V 32A (Tc) 58W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP5690 - 1038326-FDP5690 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP5690
1038326-FDP5690
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP5690 1038326-FDP5690
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038326-FDP5690 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 58W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 32A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1120pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 27 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Communications & Networking, Computers & Computer Peripherals, Industrial

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038326-FDP5690
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 58W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 32A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 1120pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 27 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Communications & Networking, Computers & Computer Peripherals, Industrial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP5690 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP5690
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP5690
MOSFET N-CH 60V 32A TO220-3

MOSFET N-CH 60V 32A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDP5690-ND 1038326-FDP5690 FDP5690
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP5690 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220 TO-220; TO-220-3
V(BR)DSS 60 volts
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