Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038326-FDP5690
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 58W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 32A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 1120pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 27 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Communications & Networking, Computers & Computer Peripherals, Industrial
N-Channel 60V 32A (Tc) 58W (Tc) Through Hole TO-220-3
MOSFET N-CH 60V 32A TO220-3
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1038326-FDP5690 | FDP5690-ND | FDP5690 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP5690 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 60 volts | ||
| PD | 58000 milliwatts |
