onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP5645 FDP5645

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204118-FDP5645
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 80A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 107nC @ 10V
Max Input Capacitance: 4468pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): IRF1018EPBF; NP80N06MLG-S18-AY; BUK9515-60E,127;
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited

MOSFET N-CH 60V 80A TO220-3 Product overview: FDP5645 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 80A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 80A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP5645 can be used for catalog matching and distributor lookup.

N-Channel 60V 80A (Ta) 125W (Tc) Through Hole TO-220-3