MOSFETs 200V N-CHANNEL MOSFET Product overview: FDP52N20 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP52N20 can be used for catalog matching and distributor lookup.
MOSFET N-CH 200V 52A TO220-3
N-Channel 200V 52A (Tc) 357W (Tc) Through Hole TO-220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067023-FDP52N20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 357W (Tc)
Family Name: FDP52N20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 52A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 2900pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 49 mOhm @ 26A, 10V
Alternative Parts (Cross-Reference): PSMN057-200P; STP75NF20; PSMN057-200P,127;
Introduction Date: January 01, 2006
ECCN: EAR99
Country of Origin: China, Republic of Korea
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
MOSFET N-CH 200V 52A TO220-3
MOSFET Transistor, N Channel, 52 A, 200 V, 41 mohm, 10 V, 5 V RoHS Compliant: Yes
N CHANNEL MOSFET, 200V, 52A, TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:52A; DRAIN SOURCE VOLTAGE VDS:200V; ON RESISTANCE RDS(ON):0.041OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:5V; MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FDP52N20 | FDP52N20 | FDP52N20-ND | 067023-FDP52N20 | FDP52N20 | 31Y1386 | 16115126 | FDP52N20 |
| Product Name | N-Channel 200V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP52N20 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 52 A, 200 V, 41 Mohm, 10 V, 5 V Rohs Compliant Onsemi | Transistor | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| Transconductance | 0.0350 kS | |||||||
| PD | 357 milliwatts | 357000 milliwatts | 357000 milliwatts | |||||
| Package Type | Tube | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | TO-3 |
